NVMYS1D2N04CLTWG The ON Semiconductor NVMYS1D2N04CLTWG is an N-Channel MOSFET with a 40V drain-source voltage. It offers a continuous drain current of 258A at 25°C case temperature and a low Rds(on) of 1.2mOhm at 10V gate-source voltage.
Mfr Part #:

NVMYS1D2N04CLTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMYS1D2N04CLTWG is an N-Channel MOSFET with a 40V drain-source voltage. It offers a continuous drain current of 258A at 25°C case temperature and a low Rds(on) of 1.2mOhm at 10V gate-source voltage.
✓ Total Stock: 6,000 pcs
$ Price Range: $0.99

NVMYS1D2N04CLTWG Available from 1 distributor

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✓ Non-Authorised
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NVMYS1D2N04CLTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMYS1D2N04CLTWG Description

Short technical summary and product information.

The ON Semiconductor NVMYS1D2N04CLTWG is a power MOSFET designed for efficient power management applications. This N-Channel device features a maximum drain-to-source voltage of 40V and a high continuous drain current capability of 258A (Tc=25°C) and 44A (Ta=25°C).

 

Key electrical characteristics include a low on-resistance (Rds(on)) of 1.2mOhm at 10V gate-source voltage, minimizing conduction losses. It also boasts low gate charge (Qg) and capacitance, reducing driver losses. The device operates within a wide temperature range of -55°C to +175°C.

 

Packaged in an industry-standard LFPAK4 (5x6 mm) with surface mount capability, the NVMYS1D2N04CLTWG is suitable for compact designs. It is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and high-reliability applications. The device is Pb-Free and RoHS compliant.

NVMYS1D2N04CLTWG Quick Information

Product Type: MOSFET
Canonical Name: NVMYS1D2N04CLTWG N-Channel MOSFET
Subcategory: N-Channel

NVMYS1D2N04CLTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NVMYS1D2N04CLTWG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMYS1D2N04CLTWG Features

  • 40V drain-to-source voltage rating.
  • High continuous drain current.
  • Low Rds(on) for minimal conduction loss.
  • LFPAK4 package for compact designs.
  • AEC-Q101 qualified for reliability.

NVMYS1D2N04CLTWG Applications

  • Suitable for power switching applications.
  • Ideal for compact power designs.
  • Used in automotive systems.
  • Efficient power management solutions.

NVMYS1D2N04CLTWG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVMYS1D2N04CLTWG?

The maximum drain-to-source voltage (Vdss) is 40V.

What is the continuous drain current of the NVMYS1D2N04CLTWG?

The continuous drain current is 258A when measured at the case temperature (Tc) and 44A when measured at the ambient temperature (Ta).

What is the Rds(on) for the NVMYS1D2N04CLTWG?

The Rds(on) is a maximum of 1.2mOhm when tested at 50A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction temperature range is -55°C to +175°C.

What package type is the NVMYS1D2N04CLTWG in?

The device is in an LFPAK4 (5x6 mm) package, also referred to as SOT-1023, 4-LFPAK.

Is the NVMYS1D2N04CLTWG RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NVMYS1D2N04CLTWG?

The Moisture Sensitivity Level is 1.

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