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NVMYS029N08LHTWG The NVMYS029N08LHTWG is an N-Channel MOSFET from On Semiconductor with an 80V drain-source voltage rating. It features a low Rds On of 29mOhm at 5A, 10V and is available in a Surface Mount package.
Mfr Part #:

NVMYS029N08LHTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NVMYS029N08LHTWG is an N-Channel MOSFET from On Semiconductor with an 80V drain-source voltage rating. It features a low Rds On of 29mOhm at 5A, 10V and is available in a Surface Mount package.
✓ Total Stock: 29,690 pcs
$ Price Range: $0.99

NVMYS029N08LHTWG Available from 1 distributor

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NVMYS029N08LHTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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NVMYS029N08LHTWG Description

Short technical summary and product information.

This NVMYS029N08LHTWG is an N-Channel MOSFET manufactured by On Semiconductor. It is designed for power applications with a maximum drain-source voltage (Vdss) of 80V and a maximum on-resistance (Rds On) of 29mOhm at 5A and 10V gate-source voltage.

 

The MOSFET has a maximum gate charge (Qg) of 9 nC at 10V and an input capacitance (Ciss) of 431 pF at 40V. It operates within a temperature range of -55°C to 175°C (TJ).

 

Packaged in a LFPAK4 (5x6) SOT-1023, 4-LFPAK format, this component is suitable for surface mounting. It offers a current rating of 7A (Ta) and 22A (Tc), with a maximum power dissipation of 3.5W (Ta) and 33W (Tc).

 

The NVMYS029N08LHTWG is part of the T8 series and utilizes MOSFET technology. It has a gate threshold voltage (Vgs(th)) of 2V at 20µA and a maximum gate-source voltage (Vgs) of ±20V.

NVMYS029N08LHTWG Quick Information

Product Type: MOSFET
Canonical Name: NVMYS029N08LHTWG N-Channel MOSFET
Subcategory: N-Channel

NVMYS029N08LHTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMYS029N08LHTWG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMYS029N08LHTWG Features

  • 80V drain-source voltage rating.
  • Low 29mOhm Rds On at 5A, 10V.
  • Surface mount LFPAK4 package.
  • Wide -55°C to 175°C operating temperature.
  • N-Channel MOSFET technology.

NVMYS029N08LHTWG Applications

  • Suitable for power switching applications.
  • Ideal for voltage regulation circuits.
  • Used in power management modules.
  • Applicable in DC-DC converters.

NVMYS029N08LHTWG FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NVMYS029N08LHTWG?

The maximum drain-source voltage (Vdss) for the NVMYS029N08LHTWG is 80V.

What is the Rds On of the NVMYS029N08LHTWG at 5A, 10V?

The Rds On (Max) at 5A, 10V for the NVMYS029N08LHTWG is 29mOhm.

What is the operating temperature range for this MOSFET?

The operating temperature range for the NVMYS029N08LHTWG is -55°C to 175°C (TJ).

What package type is the NVMYS029N08LHTWG available in?

The NVMYS029N08LHTWG is available in a Surface Mount package, specifically LFPAK4 (5x6) SOT-1023, 4-LFPAK.

What is the gate charge for the NVMYS029N08LHTWG?

The gate charge (Qg) (Max) @ Vgs is 9 nC @ 10 V.

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