NVMYS021N06CLTWG The ON Semiconductor NVMYS021N06CLTWG is an N-Channel MOSFET designed for power applications. It features a 60V drain-to-source voltage and low on-resistance.
Mfr Part #:

NVMYS021N06CLTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMYS021N06CLTWG is an N-Channel MOSFET designed for power applications. It features a 60V drain-to-source voltage and low on-resistance.
✓ Total Stock: 15,000 pcs
$ Price Range: $0.99

NVMYS021N06CLTWG Available from 1 distributor

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NVMYS021N06CLTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMYS021N06CLTWG Description

Short technical summary and product information.

The ON Semiconductor NVMYS021N06CLTWG is a single N-Channel MOSFET designed for power applications. It offers a drain-to-source voltage (Vdss) of 60V and a low maximum on-resistance of 21mOhm at 10A and 10V Vgs. The device can handle continuous drain currents of up to 9.8A at ambient temperature and 27A at case temperature.

 

This MOSFET features a small footprint LFPAK4 package (5x6 mm) suitable for compact designs. It has a gate threshold voltage of 2V at 16µA and a gate-to-source voltage range of ±20V. The operating temperature range is -55°C to 175°C.

 

Key electrical characteristics include an input capacitance of 410pF at 25V and a gate charge of 5nC at 10V Vgs. The power dissipation is rated at 3.8W at ambient temperature and 28W at case temperature. The device is AEC-Q101 qualified and RoHS compliant.

 

This MOSFET is suitable for various power switching and control applications where efficiency and space-saving are critical. Its robust construction and performance characteristics make it a reliable choice for demanding designs.

NVMYS021N06CLTWG Quick Information

Product Type: MOSFET
Series: NVMYS021N06CLTWG
Canonical Name: NVMYS021N06CLTWG N-Channel MOSFET

NVMYS021N06CLTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMYS021N06CLTWG Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMYS021N06CLTWG Features

  • 60V drain-to-source voltage rating.
  • Low 21mOhm on-resistance at 10V.
  • Handles 9.8A (Ta) and 27A (Tc) current.
  • Compact LFPAK4 (5x6 mm) package.
  • AEC-Q101 qualified for automotive use.

NVMYS021N06CLTWG Applications

  • Suitable for power switching circuits.
  • Ideal for compact electronic designs.
  • Used in automotive applications.
  • Efficient power management solutions.

NVMYS021N06CLTWG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NVMYS021N06CLTWG?

The drain-to-source voltage (Vdss) is 60V.

What is the maximum on-resistance of the NVMYS021N06CLTWG?

The maximum on-resistance is 21mOhm at 10A drain current and 10V gate-to-source voltage.

What is the continuous drain current rating?

The continuous drain current is 9.8A at ambient temperature and 27A at case temperature.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package type is the NVMYS021N06CLTWG?

The device is available in a 4-LFPAK package, also known as LFPAK4 (5x6 mm).

Is the NVMYS021N06CLTWG RoHS compliant?

Yes, the device is RoHS3 compliant.

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