| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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15,000 pcs
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15000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs(th) (Max) @ Id |
The ON Semiconductor NVMYS021N06CLTWG is a single N-Channel MOSFET designed for power applications. It offers a drain-to-source voltage (Vdss) of 60V and a low maximum on-resistance of 21mOhm at 10A and 10V Vgs. The device can handle continuous drain currents of up to 9.8A at ambient temperature and 27A at case temperature.
This MOSFET features a small footprint LFPAK4 package (5x6 mm) suitable for compact designs. It has a gate threshold voltage of 2V at 16µA and a gate-to-source voltage range of ±20V. The operating temperature range is -55°C to 175°C.
Key electrical characteristics include an input capacitance of 410pF at 25V and a gate charge of 5nC at 10V Vgs. The power dissipation is rated at 3.8W at ambient temperature and 28W at case temperature. The device is AEC-Q101 qualified and RoHS compliant.
This MOSFET is suitable for various power switching and control applications where efficiency and space-saving are critical. Its robust construction and performance characteristics make it a reliable choice for demanding designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 60V.
The maximum on-resistance is 21mOhm at 10A drain current and 10V gate-to-source voltage.
The continuous drain current is 9.8A at ambient temperature and 27A at case temperature.
The operating junction temperature range is -55°C to 175°C.
The device is available in a 4-LFPAK package, also known as LFPAK4 (5x6 mm).
Yes, the device is RoHS3 compliant.