NVMYS012N10MCLTWG The NVMYS012N10MCLTWG is an N-Channel MOSFET from On Semiconductor. It offers a 100V drain-to-source voltage and a continuous drain current of up to 52A.
Mfr Part #:

NVMYS012N10MCLTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NVMYS012N10MCLTWG is an N-Channel MOSFET from On Semiconductor. It offers a 100V drain-to-source voltage and a continuous drain current of up to 52A.
✓ Total Stock: 3,000 pcs
$ Price Range: $0.99

NVMYS012N10MCLTWG Available from 1 distributor

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✓ Non-Authorised
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NVMYS012N10MCLTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMYS012N10MCLTWG Description

Short technical summary and product information.

The NVMYS012N10MCLTWG is a single N-Channel MOSFET manufactured by On Semiconductor. It is designed for power applications, featuring a drain-to-source voltage (Vdss) of 100V and a maximum continuous drain current (Id) of 52A at 25°C case temperature. The MOSFET exhibits a low on-resistance (Rds(on)) of 12.2mOhm at 14A and 10V gate-source voltage, minimizing conduction losses.

 

This device operates within a wide temperature range of -55°C to 175°C (TJ). It is available in a compact LFPAK4 (5x6 mm) surface mount package, suitable for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive applications. It is also Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 3V at 77µA, an input capacitance (Ciss) of 1338pF at 50V, and a gate charge (Qg) of 19nC at 10V. The maximum gate-to-source voltage is ±20V. Power dissipation is rated at 72W (Tc) and 3.6W (Ta).

NVMYS012N10MCLTWG Quick Information

Product Type: MOSFET
Canonical Name: NVMYS012N10MCLTWG N-Channel MOSFET
Subcategory: N-Channel

NVMYS012N10MCLTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMYS012N10MCLTWG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMYS012N10MCLTWG Features

  • 100V drain-to-source voltage rating.
  • 52A maximum continuous drain current.
  • Low 12.2mOhm on-resistance.
  • Compact LFPAK4 surface mount package.
  • AEC-Q101 Qualified and RoHS Compliant.

NVMYS012N10MCLTWG Applications

  • Suitable for power switching applications.
  • Ideal for space-constrained designs.
  • Automotive applications due to qualification.
  • Efficient power management solutions.

NVMYS012N10MCLTWG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVMYS012N10MCLTWG?

The drain-to-source voltage (Vdss) is 100V.

What is the maximum continuous drain current for the NVMYS012N10MCLTWG?

The maximum continuous drain current is 52A at 25°C case temperature.

What is the on-resistance of the NVMYS012N10MCLTWG?

The on-resistance (Rds On) is a maximum of 12.2mOhm at 14A and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NVMYS012N10MCLTWG available in?

It is available in the LFPAK4 (5x6 mm) package, which is a surface mount type.

Is the NVMYS012N10MCLTWG RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NVMYS012N10MCLTWG?

The Moisture Sensitivity Level is 1 Unlimited.

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