NVMYS011N04CTWG The ON Semiconductor NVMYS011N04CTWG is an N-Channel MOSFET with a 40V drain-to-source voltage. It offers a low Rds(on) of 12mOhm at 10A and 10V, and a continuous drain current of up to 35A.
Mfr Part #:

NVMYS011N04CTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMYS011N04CTWG is an N-Channel MOSFET with a 40V drain-to-source voltage. It offers a low Rds(on) of 12mOhm at 10A and 10V, and a continuous drain current of up to 35A.
✓ Total Stock: 51,000 pcs
$ Price Range: $0.99

NVMYS011N04CTWG Available from 1 distributor

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NVMYS011N04CTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMYS011N04CTWG Description

Short technical summary and product information.

The NVMYS011N04CTWG is a single N-Channel MOSFET from ON Semiconductor, designed for power applications. It features a maximum drain-to-source voltage (Vds) of 40V and a low on-resistance (Rds(on)) of 12mOhm at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 10A.

 

This MOSFET can handle a continuous drain current of up to 35A under a case temperature of 25°C and 3.8W of power dissipation. Its operating temperature range is -55°C to 175°C. The device utilizes a compact LFPAK4 package, measuring 5x6 mm, suitable for space-constrained designs.

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 3.5V maximum at 20µA, a gate charge (Qg) of 7.9nC maximum at 10V, and an input capacitance (Ciss) of 420pF maximum at 25V. The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive applications. It is also Pb-Free and RoHS Compliant.

NVMYS011N04CTWG Quick Information

Product Type: MOSFET
Canonical Name: NVMYS011N04CTWG N-Channel MOSFET
Subcategory: Single

NVMYS011N04CTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NVMYS011N04CTWG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMYS011N04CTWG Features

  • 40V drain-to-source voltage rating.
  • Low 12mOhm Rds(on) at 10A, 10V.
  • High 35A continuous drain current.
  • Compact 5x6mm LFPAK4 package.
  • AEC-Q101 Qualified and PPAP Capable.

NVMYS011N04CTWG Applications

  • Used in power supply switching circuits
  • Suitable for motor control applications
  • Ideal for high-current load switching
  • Applicable in industrial power management

NVMYS011N04CTWG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVMYS011N04CTWG?

The maximum drain-to-source voltage (Vds) is 40V.

What is the typical on-resistance of the NVMYS011N04CTWG?

The typical on-resistance (Rds(on)) is 12mOhm at a drain current of 10A and gate-source voltage of 10V.

What is the continuous drain current rating?

The continuous drain current (Id) is rated at 35A when the case temperature is 25°C, and 13A when the ambient temperature is 25°C.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NVMYS011N04CTWG supplied in?

It is supplied in the LFPAK4 package, which is a 5x6 mm footprint, also referred to as SOT-1023.

Is the NVMYS011N04CTWG RoHS compliant?

Yes, the device is RoHS3 Compliant.

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