NVMYS010N04CLTWG The ON Semiconductor NVMYS010N04CLTWG is an N-Channel MOSFET designed for power applications. It features a 40V drain-to-source voltage and a low Rds(on) of 10.3mOhm.
Mfr Part #:

NVMYS010N04CLTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMYS010N04CLTWG is an N-Channel MOSFET designed for power applications. It features a 40V drain-to-source voltage and a low Rds(on) of 10.3mOhm.
✓ Total Stock: 1,000 pcs
$ Price Range: $0.99

NVMYS010N04CLTWG Available from 1 distributor

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NVMYS010N04CLTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMYS010N04CLTWG Description

Short technical summary and product information.

The ON Semiconductor NVMYS010N04CLTWG is a single N-Channel Power MOSFET. It is designed for applications requiring efficient power switching, offering a drain-to-source voltage (Vdss) of 40V.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 10.3mOhm at 20A and 10V, and a maximum gate threshold voltage (Vgs(th)) of 2V at 20µA. The device supports a continuous drain current of up to 38A at 25°C case temperature and 14A at 25°C ambient temperature. Its maximum power dissipation is rated at 28W (Tc) and 3.8W (Ta).

 

The MOSFET operates within a wide temperature range of -55°C to 175°C. It is housed in a compact LFPAK4 (5x6 mm) package, suitable for surface mounting. The AEC-Q101 qualification indicates its suitability for automotive and demanding industrial applications.

NVMYS010N04CLTWG Quick Information

Product Type: MOSFET
Series: NVMYS010N04CLTWG
Canonical Name: NVMYS010N04CLTWG N-Channel MOSFET
Subcategory: N-Channel

NVMYS010N04CLTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMYS010N04CLTWG Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMYS010N04CLTWG Features

  • 40V drain-to-source voltage rating.
  • Low 10.3mOhm Rds On.
  • 38A continuous drain current.
  • Compact LFPAK4 package.
  • AEC-Q101 Qualified.

NVMYS010N04CLTWG Applications

  • Suitable for high-current power switching applications.
  • Ideal for motor control and inverter circuits.
  • Used in compact power supply designs.
  • Applicable in automotive and industrial power systems.

NVMYS010N04CLTWG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVMYS010N04CLTWG?

The drain-to-source voltage (Vdss) is 40V.

What is the maximum on-resistance for the NVMYS010N04CLTWG?

The maximum on-resistance (Rds On) is 10.3mOhm at 20A drain current and 10V gate-to-source voltage.

What is the continuous drain current rating?

The continuous drain current is 38A when measured at the case temperature (Tc) of 25°C, and 14A when measured at the ambient temperature (Ta) of 25°C.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NVMYS010N04CLTWG in?

The device is supplied in the LFPAK4 (5x6 mm) package, also referred to as SOT-1023, 4-LFPAK.

Is the NVMYS010N04CLTWG AEC-Q101 qualified?

Yes, the device is AEC-Q101 qualified.

What is the RoHS status of this MOSFET?

This device is Pb-Free and RoHS Compliant.

NVMYS010N04CLTWG Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
NTMYS010N04CLTWG
NTMYS010N04CLTWG
On Semiconductor
MOSFET N-CH 40V 14A/38A 4LFPAK
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