| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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35,865 pcs
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35865 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This NVMYS008N08LHTWG is an 80V N-Channel MOSFET from On Semiconductor. It is designed for efficient power switching applications.
Key electrical characteristics include a maximum Drain-to-Source Voltage (Vdss) of 80V and a low on-resistance (Rds On) of 8.8mOhm at 10A, 10V. The gate charge (Qg) is 25nC at 10V, and the gate threshold voltage (Vgs(th)) is 2V at 70µA. It can handle continuous drain currents of up to 13A (Ta) or 59A (Tc) and has a maximum power dissipation of 3.7W (Ta) or 73W (Tc).
The MOSFET is housed in a Surface Mount package, specifically the LFPAK4 (5x6) or SOT-1023, 4-LFPAK. The operating temperature range is -55°C to 175°C (TJ). This component is suitable for various power management designs requiring robust and efficient switching.
It operates with a maximum gate-source voltage of ±20V and utilizes MOSFET technology. The part is RoHS3 Compliant, has an MSL rating of 1, and is REACH Unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain to Source Voltage (Vdss) is 80 V.
The maximum Rds On is 8.8mOhm at 10A, 10V.
The operating temperature range is -55°C to 175°C (TJ).
It is available in a Surface Mount package, specifically LFPAK4 (5x6) or SOT-1023, 4-LFPAK.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.