NVMYS007N10MCLTWG The ON Semiconductor NVMYS007N10MCLTWG is an N-Channel MOSFET designed for power applications. It features a 100V drain-to-source voltage and low on-resistance.
Mfr Part #:

NVMYS007N10MCLTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMYS007N10MCLTWG is an N-Channel MOSFET designed for power applications. It features a 100V drain-to-source voltage and low on-resistance.
✓ Total Stock: 9,000 pcs
$ Price Range: $0.99

NVMYS007N10MCLTWG Available from 1 distributor

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NVMYS007N10MCLTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMYS007N10MCLTWG Description

Short technical summary and product information.

The ON Semiconductor NVMYS007N10MCLTWG is a single N-Channel MOSFET designed for power applications requiring high efficiency and compact solutions. This device offers a drain-to-source voltage (Vdss) of 100V and a low on-resistance (Rds(on)) of 7 mOhm at a gate-to-source voltage (Vgs) of 10V, minimizing conduction losses.

 

With a continuous drain current rating of 83A at 25°C case temperature, it is suitable for demanding applications. The MOSFET features a gate charge (Qg) of 37 nC at 10V Vgs and an input capacitance (Ciss) of 2700 pF at 50V Vds, contributing to reduced driver losses.

 

The NVMYS007N10MCLTWG is housed in an LFPAK4 (5x6 mm) package, providing a small footprint for compact designs. It operates within a temperature range of -55°C to 175°C (TJ) and is surface-mounted. The device is Pb-free and halogen-free, adhering to environmental standards.

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 3V maximum at 141µA and a maximum gate-to-source voltage of ±20V. Power dissipation is rated at 107W at 25°C case temperature and 3.8W at 25°C ambient temperature.

NVMYS007N10MCLTWG Quick Information

Product Type: MOSFET
Canonical Name: NVMYS007N10MCLTWG N-Channel MOSFET
Subcategory: N-Channel

NVMYS007N10MCLTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMYS007N10MCLTWG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMYS007N10MCLTWG Features

  • 100V drain-to-source voltage rating.
  • Low 7mOhm Rds(on) at 10V.
  • High 83A continuous drain current.
  • Compact LFPAK4 surface mount package.
  • Pb-free and halogen-free construction.

NVMYS007N10MCLTWG Applications

  • Suitable for high-efficiency power designs.
  • Ideal for compact electronic systems.
  • Used in applications requiring low conduction loss.
  • Designed for demanding power requirements.

NVMYS007N10MCLTWG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVMYS007N10MCLTWG?

The drain-to-source voltage (Vdss) is 100V.

What is the maximum on-resistance for the NVMYS007N10MCLTWG?

The maximum on-resistance is 7 mOhm at 25A drain current and 10V gate-to-source voltage.

What is the continuous drain current rating?

The continuous drain current is 83A at 25°C case temperature and 16A at 25°C ambient temperature.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the NVMYS007N10MCLTWG in?

It is in the LFPAK4 (5x6 mm) package, also referred to as SOT-1023, 4-LFPAK, and is surface-mounted.

Is the NVMYS007N10MCLTWG RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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