| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVMYS006N08LHTWG from On Semiconductor is an N-Channel MOSFET with a drain-to-source voltage (Vdss) of 80V. It offers a low on-resistance (Rds(on)) of 6.2mOhm at a gate-source voltage (Vgs) of 10V, minimizing conduction losses. The continuous drain current is rated at 77A under Tc=25°C and 16A under Ta=25°C, with a maximum power dissipation of 89W (Tc=25°C).
This MOSFET utilizes a compact LFPAK4 (5x6 mm) package, suitable for space-constrained designs. It operates within a temperature range of -55°C to +175°C. Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2V maximum at 95µA and an input capacitance (Ciss) of 1950pF at 40V. The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive applications.
Designed for efficiency, the NVMYS006N08LHTWG features low gate charge (Qg) and capacitance to minimize driver losses. Its robust construction and performance characteristics make it suitable for various power switching applications where high efficiency and a small footprint are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 80V.
The on-resistance (Rds(on)) is a maximum of 6.2mOhm at 15A drain current and 10V gate-source voltage.
The continuous drain current is 77A at Tc=25°C and 16A at Ta=25°C.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in the LFPAK4 (5x6 mm) package, also referred to as SOT-1023, 4-LFPAK.
Yes, the device is RoHS3 Compliant and Pb-Free.