| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12,000 pcs
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12000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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This N-Channel MOSFET from ON Semiconductor, part number NVMYS003N08LHTWG, is designed for power applications requiring high efficiency and reliability. It offers a Drain-to-Source Voltage (Vdss) of 80V and a low on-resistance (Rds On) of 3.3mOhm at a gate drive of 10V and drain current of 50A.
The device is built using MOSFET technology and operates with a gate-source voltage range of ±20V. Key electrical parameters include an input capacitance of 3735 pF at 40V and a gate charge of 64 nC at 10V. The continuous drain current is rated at 22A at ambient temperature (Ta) and 132A at case temperature (Tc).
Packaged in a SOT-1023, 4-LFPAK configuration, this MOSFET is suitable for surface mounting. It operates within a temperature range of -55°C to 175°C (TJ). The power dissipation is 3.8W at ambient temperature and 137W at case temperature.
This component is RoHS3 Compliant, has an MSL rating of 1, and is REACH Unaffected, making it suitable for a wide range of industrial and commercial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-to-Source Voltage (Vdss) for the NVMYS003N08LHTWG is 80V.
The Rds On (Max) is 3.3mOhm at a drain current of 50A and gate-source voltage of 10V.
The operating temperature range is -55°C to 175°C (TJ).
The device is supplied in a SOT-1023, 4-LFPAK package.
It is a Surface Mount device.