NVMYS003N08LHTWG The ON Semiconductor NVMYS003N08LHTWG is an N-Channel MOSFET with a Drain-to-Source Voltage of 80V. It features a low Rds On of 3.3mOhm at 50A, 10V and is designed for surface mount applications.
Mfr Part #:

NVMYS003N08LHTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMYS003N08LHTWG is an N-Channel MOSFET with a Drain-to-Source Voltage of 80V. It features a low Rds On of 3.3mOhm at 50A, 10V and is designed for surface mount applications.
✓ Total Stock: 12,000 pcs
$ Price Range: $0.99

NVMYS003N08LHTWG Available from 1 distributor

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NVMYS003N08LHTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Package / Case
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMYS003N08LHTWG Description

Short technical summary and product information.

This N-Channel MOSFET from ON Semiconductor, part number NVMYS003N08LHTWG, is designed for power applications requiring high efficiency and reliability. It offers a Drain-to-Source Voltage (Vdss) of 80V and a low on-resistance (Rds On) of 3.3mOhm at a gate drive of 10V and drain current of 50A.

 

The device is built using MOSFET technology and operates with a gate-source voltage range of ±20V. Key electrical parameters include an input capacitance of 3735 pF at 40V and a gate charge of 64 nC at 10V. The continuous drain current is rated at 22A at ambient temperature (Ta) and 132A at case temperature (Tc).

 

Packaged in a SOT-1023, 4-LFPAK configuration, this MOSFET is suitable for surface mounting. It operates within a temperature range of -55°C to 175°C (TJ). The power dissipation is 3.8W at ambient temperature and 137W at case temperature.

 

This component is RoHS3 Compliant, has an MSL rating of 1, and is REACH Unaffected, making it suitable for a wide range of industrial and commercial applications.

NVMYS003N08LHTWG Quick Information

Product Type: MOSFET
Series: T8
Canonical Name: N-Channel MOSFET
Subcategory: Single

NVMYS003N08LHTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMYS003N08LHTWG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMYS003N08LHTWG Features

  • 80V Drain-to-Source Voltage.
  • Low 3.3mOhm Rds On.
  • Surface Mount package.
  • N-Channel MOSFET technology.
  • Wide operating temperature range.

NVMYS003N08LHTWG Applications

  • Suitable for power switching.
  • Ideal for high-efficiency circuits.
  • Used in industrial applications.
  • Designed for compact systems.

NVMYS003N08LHTWG FAQs

5 frequently asked questions generated from this part’s specifications.
What is the Drain-to-Source Voltage (Vdss) for the NVMYS003N08LHTWG?

The Drain-to-Source Voltage (Vdss) for the NVMYS003N08LHTWG is 80V.

What is the Rds On (Max) @ Id, Vgs for this MOSFET?

The Rds On (Max) is 3.3mOhm at a drain current of 50A and gate-source voltage of 10V.

What is the operating temperature range for the NVMYS003N08LHTWG?

The operating temperature range is -55°C to 175°C (TJ).

What type of package is the NVMYS003N08LHTWG in?

The device is supplied in a SOT-1023, 4-LFPAK package.

How is the NVMYS003N08LHTWG mounted?

It is a Surface Mount device.

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