NVMTSC1D3N08M7TXG The ON Semiconductor NVMTSC1D3N08M7TXG is an N-Channel MOSFET with a drain-to-source voltage of 80V and a continuous drain current of 348A at 25°C (Tc). It features a low on-resistance of 1.25mOhm at 10V.
Mfr Part #:

NVMTSC1D3N08M7TXG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMTSC1D3N08M7TXG is an N-Channel MOSFET with a drain-to-source voltage of 80V and a continuous drain current of 348A at 25°C (Tc). It features a low on-resistance of 1.25mOhm at 10V.
✓ Total Stock: 6,000 pcs
$ Price Range: $0.99

NVMTSC1D3N08M7TXG Available from 1 distributor

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✓ Non-Authorised
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NVMTSC1D3N08M7TXG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMTSC1D3N08M7TXG Description

Short technical summary and product information.

This N-Channel MOSFET from ON Semiconductor, part number NVMTSC1D3N08M7TXG, is designed for power applications requiring high current handling and low conduction losses. It boasts a drain-to-source voltage (Vdss) of 80V and can handle a continuous drain current of up to 348A when the case temperature is 25°C, with a significant current rating of 46A at 25°C ambient temperature.

 

The MOSFET exhibits a low on-resistance (Rds(on)) of 1.25mOhm at 80A and 10V gate drive voltage, minimizing power dissipation during conduction. Key electrical parameters include a gate charge (Qg) of 196 nC at 10V and an input capacitance (Ciss) of 14530 pF at 40V.

 

Operating across a wide temperature range from -55°C to 175°C (TJ), this device is suitable for demanding environments. It is housed in an 8-PowerTDFN package, also referred to as 8-DFNW (8.3x8.4), and is designed for surface mounting.

 

The NVMTSC1D3N08M7TXG is AEC-Q101 qualified, indicating its suitability for automotive applications. It is also RoHS3 compliant, REACH unaffected, and has a Moisture Sensitivity Level (MSL) of 1.

NVMTSC1D3N08M7TXG Quick Information

Product Type: MOSFET
Canonical Name: NVMTSC1D3N08M7TXG N-Channel MOSFET
Subcategory: N-Channel

NVMTSC1D3N08M7TXG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMTSC1D3N08M7TXG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMTSC1D3N08M7TXG Features

  • 80V drain-to-source voltage rating.
  • High continuous drain current (348A Tc).
  • Low on-resistance of 1.25mOhm.
  • AEC-Q101 qualified for automotive use.
  • Compact 8-PowerTDFN surface mount package.

NVMTSC1D3N08M7TXG Applications

  • Suitable for high-power switching.
  • Ideal for automotive applications.
  • Used in power management circuits.
  • Efficient conduction loss reduction.

NVMTSC1D3N08M7TXG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVMTSC1D3N08M7TXG?

The maximum drain-to-source voltage (Vdss) is 80V.

What is the continuous drain current rating?

The continuous drain current is 348A at 25°C case temperature and 46A at 25°C ambient temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance (Rds(on)) is 1.25mOhm when measured at 80A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package type is the NVMTSC1D3N08M7TXG MOSFET in?

It is supplied in an 8-PowerTDFN package, also known as 8-DFNW (8.3x8.4), and is designed for surface mounting.

Is this MOSFET AEC-Q101 qualified?

Yes, the NVMTSC1D3N08M7TXG is AEC-Q101 qualified.

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