| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
36,431 pcs
|
36431 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from ON Semiconductor, part number NVMTS1D6N10MCTXG, is designed for robust performance in power switching applications. It features a maximum drain-to-source voltage (Vdss) of 100V and a low on-resistance (Rds On) of 1.7mOhm at 90A and 10V gate drive.
The device supports a continuous current of 36A at ambient temperature and up to 273A at case temperature, with a maximum power dissipation of 5W (Ta) or 291W (Tc). It operates within a wide temperature range of -55°C to 175°C (TJ).
Packaged in an 8-PowerTDFN (8-DFNW) format, this MOSFET is suitable for surface mount applications. Key electrical characteristics include a gate charge (Qg) of 106 nC at 10V and an input capacitance (Ciss) of 7630 pF at 50V. The gate threshold voltage (Vgs(th)) is 4V at 650µA, with a maximum gate-to-source voltage of ±20V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 100V.
The maximum on-resistance is 1.7mOhm at 90A and 10V gate drive.
It has a continuous current rating of 36A at ambient temperature and 273A at case temperature.
The operating temperature range is -55°C to 175°C (TJ).
It is supplied in an 8-PowerTDFN package.
The gate charge is a maximum of 106 nC at 10V.
The maximum input capacitance is 7630 pF at 50V.