| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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12,000 pcs
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12000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVMTS1D2N08H is a single N-Channel Power MOSFET manufactured by On Semiconductor. It is designed for high-performance applications, offering a drain-to-source voltage (Vdss) of 80V and a continuous drain current (Id) of up to 337A at 25°C case temperature. The MOSFET boasts a low on-resistance (Rds(on)) of 1.1mOhm at 90A and 10V gate drive, minimizing conduction losses. Its low gate charge (Qg) and capacitance contribute to reduced driver losses.
This device operates within a wide temperature range of -55°C to 175°C. It is housed in an 8-DFNW (8.3x8.4 mm) surface-mount package, providing a small footprint for compact designs. The NVMTS1D2N08H is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and demanding industrial applications. It is also Pb-free and RoHS compliant.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 4V maximum at 590µA and input capacitance (Ciss) of 10100 pF at 40V. The device supports a gate-to-source voltage (Vgs) of up to ±20V. Power dissipation is rated at 300W (Tc) and 5W (Ta), with thermal resistance values of 0.5°C/W (junction-to-case) and 30°C/W (junction-to-ambient).
The NVMTS1D2N08H is designed for applications requiring efficient power switching and low conduction losses. Its robust construction and qualification make it a reliable choice for power management solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 80 V.
The maximum continuous drain current is 337 A at 25°C case temperature and 43.5 A at 25°C ambient temperature.
The Rds(on) is a maximum of 1.1mOhm at 90A drain current and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to +175°C.
The NVMTS1D2N08H is supplied in an 8-DFNW (8.3x8.4 mm) surface-mount package.
Yes, the NVMTS1D2N08H is AEC-Q101 qualified.