| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVMTS1D1N04CTXG from On Semiconductor is a single N-Channel MOSFET designed for power applications. It offers a drain-source voltage (Vdss) of 40V and a maximum on-resistance (Rds On) of 1.1mOhm at 50A and 10V gate drive voltage.
This MOSFET is rated for a continuous current of 48.8A at ambient temperature and up to 277A at case temperature. It operates within a wide temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 4.7W (Ta) or 153W (Tc).
The device utilizes MOSFET (Metal Oxide) technology and is housed in an 8-PowerTDFN package, suitable for surface mount applications. Key electrical parameters include a gate charge (Qg) of 86 nC and input capacitance (Ciss) of 5410 pF.
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are noted as unverified in the database.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 40V.
The maximum on-resistance is 1.1mOhm at 50A and 10V.
The continuous current rating is 48.8A at ambient temperature and 277A at case temperature.
The operating temperature range is -55°C to 175°C (TJ).
This MOSFET is in an 8-PowerTDFN package.
This MOSFET is designed for surface mount.