| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,284 pcs
|
2284 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVMTS0D7N06CLTXG is an N-Channel MOSFET from ON Semiconductor, designed for power applications. It offers a drain-source voltage (Vds) of 60V and a high continuous drain current capability of 477A at 25°C case temperature, with a lower rating of 62.2A at 25°C ambient temperature.
Key electrical characteristics include a low on-resistance (Rds(on)) of 0.68mOhm at 10V Vgs, minimizing conduction losses. The gate charge (Qg) is 225 nC at 10V Vgs, and input capacitance (Ciss) is 16200 pF at 25V Vds. The gate-to-source threshold voltage (Vgs(th)) is a maximum of 2.5V at 250µA.
This MOSFET operates within a junction and storage temperature range of -55°C to +175°C. It is housed in an 8-DFNW (8.3x8.4 mm) surface-mount package, suitable for compact designs. The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive applications. It is also Pb-free, Halogen-free, and BFR-free, complying with RoHS standards.
With a power dissipation of up to 294.6W (Tc) and 5W (Ta), and a junction-to-case thermal resistance of 0.5 °C/W, it is engineered for efficient thermal management in demanding power conversion and switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vds) is 60 V.
The maximum continuous drain current (Id) is 477 A when measured at the case temperature (Tc) of 25°C.
The on-resistance (Rds On) is a maximum of 0.68mOhm when tested at 50A drain current and 10V gate-to-source voltage.
The operating junction and storage temperature range is from -55°C to +175°C.
The NVMTS0D7N06CLTXG is supplied in an 8-DFNW (8.3x8.4 mm) surface mount package.
Yes, the NVMTS0D7N06CLTXG is AEC-Q101 qualified.
The NVMTS0D7N06CLTXG is RoHS3 Compliant.