| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,362 pcs
|
1362 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVMTS0D7N04CLTXG from ON Semiconductor is a high-performance N-Channel MOSFET designed for power applications. It offers a Drain-to-Source Voltage (Vdss) of 40V and a low on-resistance (Rds On) of 0.63mOhm at 50A and 10V gate drive. This device supports a continuous drain current of up to 433A at 25°C case temperature and 67A at 25°C ambient temperature.
Featuring a low Rds(on) to minimize conduction losses and low gate charge (Qg) to reduce driver losses, this MOSFET is suitable for demanding applications. It operates within a wide temperature range of -55°C to 175°C (TJ).
The MOSFET is housed in an 8-PowerTDFN package, providing a small footprint for compact designs. It is AEC-Q101 Qualified and PPAP Capable, indicating its suitability for automotive and high-reliability applications. The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
Key electrical characteristics include an input capacitance (Ciss) of 12238 pF at 25V and a gate-source voltage (Vgs) range of ±20V. The threshold voltage (Vgs(th)) is 2.5V at 250µA. Thermal performance is supported by a junction-to-case thermal resistance of 0.73 °C/W and a junction-to-ambient thermal resistance of 30.4 °C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-to-Source Voltage (Vdss) is 40V.
The Rds On is a maximum of 0.63mOhm at 50A and 10V gate drive.
The continuous drain current is 433A at 25°C case temperature and 67A at 25°C ambient temperature.
This MOSFET is supplied in an 8-PowerTDFN package.
The operating temperature range is -55°C to 175°C (TJ).
Yes, the device is RoHS3 Compliant.