| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This N-Channel MOSFET from ON Semiconductor, part number NVMTS04D4N04CLTXG, is designed for power applications requiring high current handling and low conduction losses. It boasts a 40V drain-to-source breakdown voltage and can sustain a continuous drain current of 553.8A at 25°C case temperature.
The MOSFET offers a low on-resistance of 0.4mOhm at 50A and 10V gate-source voltage, minimizing power dissipation. It features a gate charge of 163 nC and an input capacitance of 20600 pF, contributing to efficient switching performance.
Designed for surface mounting, the NVMTS0D4N04CLTXG comes in an 8-DFNW (8.3x8.4mm) package. It operates within a temperature range of -55°C to 175°C and is AEC-Q101 qualified, making it suitable for demanding automotive and industrial applications.
Key electrical characteristics include a gate-source voltage range of ±20V and a gate-source threshold voltage of 2.5V. The device is Pb-Free, Halogen Free, and RoHS 3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage is 40V.
The maximum continuous drain current is 553.8A at 25°C case temperature.
The Rds On (Max) is 0.4mOhm at 50A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 175°C.
It is supplied in an 8-PowerTDFN package.
Yes, the NVMTS0D4N04CLTXG is AEC-Q101 qualified.