NVMJST1D6N04CTXG The On Semiconductor NVMJST1D6N04CTXG is an N-Channel MOSFET designed for power applications. It offers a 40V drain-to-source voltage and a continuous drain current of 314A.
Mfr Part #:

NVMJST1D6N04CTXG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVMJST1D6N04CTXG is an N-Channel MOSFET designed for power applications. It offers a 40V drain-to-source voltage and a continuous drain current of 314A.
✓ Total Stock: 15,000 pcs
$ Price Range: $3.63

NVMJST1D6N04CTXG Available from 1 distributor

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NVMJST1D6N04CTXG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMJST1D6N04CTXG Description

Short technical summary and product information.

The NVMJST1D6N04CTXG from On Semiconductor is a high-performance N-Channel MOSFET. It features a 40V drain-to-source voltage (Vdss) and a maximum continuous drain current of 314A at 25°C.

 

This MOSFET boasts a low on-resistance of 1.65mOhm at 50A and 10V gate drive, minimizing conduction losses. Its gate charge (Qg) is 47nC maximum at 10V, and input capacitance (Ciss) is 3300pF maximum at 25V, contributing to reduced driver losses.

 

The device operates within a wide temperature range of -55°C to 175°C (TJ). It is housed in a compact 5x7mm TCPAK57 package with a Surface Mount type, suitable for space-constrained designs. The MOSFET is AEC-Q101 qualified and RoHS compliant.

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 3.5V maximum at 130µA and a maximum gate-to-source voltage of ±20V. The maximum power dissipation is rated at 300W at 25°C case temperature.

NVMJST1D6N04CTXG Quick Information

Product Type: MOSFET
Series: NVMJST1D6N04CTXG
Canonical Name: NVMJST1D6N04CTXG N-Channel MOSFET
Subcategory: Single

NVMJST1D6N04CTXG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMJST1D6N04CTXG Estimated Pricing

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1+ $3.63 $3.63

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMJST1D6N04CTXG Features

  • 40V drain-to-source voltage rating.
  • 314A maximum continuous drain current.
  • Low 1.65mOhm on-resistance.
  • Compact 5x7mm TCPAK57 package.
  • AEC-Q101 qualified and RoHS compliant.

NVMJST1D6N04CTXG Applications

  • Suitable for high-power switching.
  • Designed for efficient power conversion.
  • Ideal for compact electronic designs.
  • Automotive applications supported.

NVMJST1D6N04CTXG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVMJST1D6N04CTXG?

The maximum drain-to-source voltage (Vdss) is 40V.

What is the continuous drain current rating?

The continuous drain current is 314A at a case temperature of 25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance (Rds On) is 1.65mOhm at 50A drain current and 10V gate-to-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NVMJST1D6N04CTXG supplied in?

It is supplied in a 10-TCPAK package, which is a 5x7mm footprint.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

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