| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| SVHC Present |
The NVMJST1D4N06CLTXG from onsemi is an N-Channel MOSFET featuring a TRENCH 6 technology and a 60V drain-source voltage. It offers a continuous drain current of 42A at 25°C ambient temperature and 198A at 25°C case temperature. The device has a low on-resistance of 1.49mOhm at 50A and 10V gate drive.
This MOSFET is qualified to AEC-Q101 standards and operates within a temperature range of -55°C to 175°C. It comes in a 10-PowerLSOP (10-TCPAK) surface mount package, suitable for various electronic applications requiring efficient power switching.
Key electrical parameters include a gate threshold voltage of 2V at 250µA and a maximum gate-source voltage of ±20V. Input capacitance (Ciss) is 6555 pF at 25V, output capacitance (Coss) is 3695 pF, and reverse transfer capacitance (Crss) is 37.5 pF. The maximum gate charge (Qg) is 92.2 nC at 10V gate drive.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The continuous drain current is 198A at Tc=25°C and 42A at Ta=25°C.
The maximum drain-source on-resistance is 1.49mOhm at ID=50A and VGS=10V.
The gate threshold voltage is 2V maximum at ID=250µA.
Yes, it is AEC-Q101 qualified.
The operating junction temperature range is -55°C to 175°C.
The device is offered in a 10-PowerLSOP (10-TCPAK) surface mount package.