NVMJST1D3N04CTXG The On Semiconductor NVMJST1D3N04CTXG is an N-Channel MOSFET with a 40V drain-source voltage and a low Rds On of 1.39mOhm at 50A. It is housed in a TCPAK57 package.
Mfr Part #:

NVMJST1D3N04CTXG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVMJST1D3N04CTXG is an N-Channel MOSFET with a 40V drain-source voltage and a low Rds On of 1.39mOhm at 50A. It is housed in a TCPAK57 package.
✓ Total Stock: 6,000 pcs
$ Price Range: $0.99

NVMJST1D3N04CTXG Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request On Request On Request On Request

NVMJST1D3N04CTXG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMJST1D3N04CTXG Description

Short technical summary and product information.

The On Semiconductor NVMJST1D3N04CTXG is a single N-Channel MOSFET designed for power applications. It features a maximum drain-to-source voltage (Vds) of 40V and a low on-resistance (Rds On) of 1.39mOhm at a drain current (Id) of 50A and gate-source voltage (Vgs) of 10V. The continuous drain current is rated at 386A at 25°C case temperature, with a maximum power dissipation of 375W.

 

This MOSFET operates within a junction temperature range of -55°C to +175°C. Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 3.5V maximum at 170µA and input capacitance (Ciss) of 4300pF at 25V. The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive applications.

 

The NVMJST1D3N04CTXG is supplied in a TCPAK57 5x7 Top Cool package, designed for surface mounting. This package offers a small footprint for compact designs and features low Rds(on) to minimize conduction losses and low QG and capacitance to minimize driver losses. It is also Pb-free and RoHS compliant.

NVMJST1D3N04CTXG Quick Information

Product Type: MOSFET
Series: TRENCH 6 40V LFPAK 5X7
Canonical Name: NVMJST1D3N04CTXG N-Channel MOSFET

NVMJST1D3N04CTXG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMJST1D3N04CTXG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMJST1D3N04CTXG Features

  • 40V drain-to-source voltage rating.
  • Low 1.39mOhm Rds On.
  • High 386A continuous drain current.
  • Compact 5x7mm TCPAK57 package.
  • AEC-Q101 Qualified and PPAP Capable.

NVMJST1D3N04CTXG Applications

  • Suitable for high-power switching.
  • Ideal for automotive applications.
  • Designed for compact power solutions.
  • Minimizes conduction and driver losses.

NVMJST1D3N04CTXG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVMJST1D3N04CTXG?

The maximum drain-to-source voltage (Vds) is 40V.

What is the Rds On (Max) for this MOSFET?

The Rds On (Max) is 1.39mOhm at a drain current of 50A and gate-source voltage of 10V.

What is the continuous drain current rating?

The continuous drain current is 386A at a case temperature of 25°C.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NVMJST1D3N04CTXG supplied in?

It is supplied in a TCPAK57 5x7 Top Cool package.

Is this MOSFET AEC-Q101 Qualified?

Yes, this device is AEC-Q101 Qualified and PPAP Capable.

Home
Account

Categories