NVMJST1D2N04CTXG The ON Semiconductor NVMJST1D2N04CTXG is an N-Channel MOSFET designed for power applications. It features a low on-resistance and high current capability.
Mfr Part #:

NVMJST1D2N04CTXG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMJST1D2N04CTXG is an N-Channel MOSFET designed for power applications. It features a low on-resistance and high current capability.
✓ Total Stock: 33,000 pcs
$ Price Range: $0.99

NVMJST1D2N04CTXG Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
33,000 pcs
33000 pcs On Request 1 On Request On Request On Request On Request On Request

NVMJST1D2N04CTXG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMJST1D2N04CTXG Description

Short technical summary and product information.

The ON Semiconductor NVMJST1D2N04CTXG is a high-performance N-Channel MOSFET. It is designed with a small footprint (5x7 mm) and features low RDS(on) to minimize conduction losses and low QG and capacitance to minimize driver losses.

 

This MOSFET has a Drain-to-Source Voltage (Vdss) of 40V and a maximum continuous drain current of 451A at 25°C case temperature. The on-resistance is rated at a maximum of 1.25mOhm at 50A and 10V gate-source voltage. It operates within a temperature range of -55°C to 175°C.

 

The device is housed in a TCPAK57 package, suitable for surface mounting. It is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and demanding industrial applications. The device is also Pb-free and RoHS compliant.

 

Key electrical characteristics include a gate threshold voltage of 4V maximum at 200µA, a gate-to-source voltage range of ±20V, and an input capacitance of 5340pF maximum at 20V. The power dissipation is rated at 454W maximum at 25°C case temperature.

NVMJST1D2N04CTXG Quick Information

Product Type: MOSFET
Series: TRENCH 6 40V LFPAK 5X7
Canonical Name: NVMJST1D2N04CTXG N-Channel MOSFET
Subcategory: N-Channel

NVMJST1D2N04CTXG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NVMJST1D2N04CTXG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMJST1D2N04CTXG Features

  • 40V Drain-to-Source Voltage (Vdss).
  • Low 1.25mOhm On-Resistance.
  • High 451A Continuous Drain Current.
  • Surface Mount TCPAK57 Package.
  • AEC-Q101 Qualified and PPAP Capable.

NVMJST1D2N04CTXG Applications

  • Suitable for high-power switching.
  • Designed for efficient power conversion.
  • Used in demanding industrial applications.
  • Automotive qualified component.

NVMJST1D2N04CTXG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-to-Source Voltage (Vdss) for the NVMJST1D2N04CTXG?

The maximum Drain-to-Source Voltage (Vdss) is 40V.

What is the maximum On-Resistance (Rds(on)) for this MOSFET?

The maximum On-Resistance (Rds(on)) is 1.25mOhm at 50A and 10V.

What is the continuous drain current rating?

The continuous drain current rating is 451A at a case temperature of 25°C.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C (TJ).

What type of package is the NVMJST1D2N04CTXG in?

It is in a TCPAK57 package, designed for surface mounting.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

Home
Account

Categories