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NVMJST0D9N04CTXG The On Semiconductor NVMJST0D9N04CTXG is an N-Channel MOSFET with a 40V drain-to-source voltage. It features a low Rds(on) of 1.07mOhm at 50A and 10V, and a continuous drain current of 531A at 25°C.
Mfr Part #:

NVMJST0D9N04CTXG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVMJST0D9N04CTXG is an N-Channel MOSFET with a 40V drain-to-source voltage. It features a low Rds(on) of 1.07mOhm at 50A and 10V, and a continuous drain current of 531A at 25°C.
✓ Total Stock: 225,000 pcs
$ Price Range: $0.99

NVMJST0D9N04CTXG Available from 1 distributor

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✓ Non-Authorised
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225,000 pcs
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NVMJST0D9N04CTXG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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NVMJST0D9N04CTXG Description

Short technical summary and product information.

The On Semiconductor NVMJST0D9N04CTXG is an N-Channel Power MOSFET designed for efficient power management. It offers a 40V drain-to-source breakdown voltage and a maximum continuous drain current of 531A at 25°C.

 

Key electrical characteristics include a low on-resistance of 1.07mOhm at 50A and 10V gate drive, minimizing conduction losses. The gate threshold voltage is a maximum of 3.5V at 190µA, and the maximum gate-to-source voltage is ±20V. Input capacitance (Ciss) is rated at 6100 pF at 25V, with a gate charge (Qg) of 86 nC at 10V.

 

This MOSFET operates within a wide temperature range of -55°C to 175°C. It is housed in a compact 5x7mm TCPAK 57 (TCPAK10) package, suitable for space-constrained designs. The device is AEC-Q101 qualified and RoHS compliant, indicating suitability for demanding automotive and industrial applications.

NVMJST0D9N04CTXG Quick Information

Product Type: MOSFET
Series: TRENCH 6 40V LFPAK 5X7
Canonical Name: NVMJST0D9N04CTXG N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

NVMJST0D9N04CTXG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMJST0D9N04CTXG Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMJST0D9N04CTXG Features

  • 40V drain-to-source voltage rating.
  • 531A maximum continuous drain current.
  • Low 1.07mOhm Rds On at 50A.
  • Compact 5x7mm TCPAK 57 package.
  • AEC-Q101 qualified for automotive use.

NVMJST0D9N04CTXG Applications

  • Suitable for high-power switching.
  • Ideal for automotive applications.
  • Used in power supply designs.
  • Efficient for motor control.

NVMJST0D9N04CTXG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVMJST0D9N04CTXG?

The maximum drain-to-source voltage (Vdss) is 40V.

What is the continuous drain current at 25°C?

The continuous drain current (Id) at 25°C is 531A.

What is the maximum on-resistance of the NVMJST0D9N04CTXG?

The maximum on-resistance (Rds On) is 1.07mOhm at 50A and 10V.

What is the operating temperature range for this MOSFET?

The operating junction temperature range is -55°C to 175°C.

What package type is the NVMJST0D9N04CTXG supplied in?

It is supplied in a 10-TCPAK package, suitable for surface mounting.

Is the NVMJST0D9N04CTXG RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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