| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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36 pcs
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36 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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| Tape & Reel | |
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The ON Semiconductor NVMJS1D7N04CTWG is a power MOSFET with an N-Channel configuration. It offers a drain-source breakdown voltage of 40V and a maximum continuous drain current of 185A at 25°C case temperature.
Key electrical characteristics include a low on-resistance of 1.7 mOhm at 50A and 10V gate-source voltage, and a gate charge of 47 nC. The device operates within a temperature range of -55°C to 175°C.
Designed for compact applications, this MOSFET utilizes the LFPAK8 package, which is an industry standard. It is AEC-Q101 qualified and PPAP capable, indicating suitability for automotive and demanding industrial environments. The device is also Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
Mounting is via surface mount technology. The small footprint of the LFPAK8 package (5x6 mm) helps minimize conduction and driver losses, making it suitable for power management solutions where space and efficiency are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is 40 V.
The maximum continuous drain current is 185 A at 25°C case temperature.
The maximum on-resistance is 1.7 mOhm at 50A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 175°C.
This MOSFET is in the LFPAK8 package, also referred to as SOT-1205, 8-LFPAK56.
Yes, this MOSFET is AEC-Q101 qualified.
Yes, this product is RoHS3 Compliant.