NVMJS1D5N04CLTWG The On Semiconductor NVMJS1D5N04CLTWG is an N-Channel MOSFET designed for power applications. It offers a 40V drain-to-source voltage and a low on-resistance.
Mfr Part #:

NVMJS1D5N04CLTWG

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVMJS1D5N04CLTWG is an N-Channel MOSFET designed for power applications. It offers a 40V drain-to-source voltage and a low on-resistance.
✓ Total Stock: 16,000 pcs
$ Price Range: $0.99

NVMJS1D5N04CLTWG Available from 2 distributors

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✓ Non-Authorised
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15,000 pcs
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1,000 pcs
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NVMJS1D5N04CLTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMJS1D5N04CLTWG Description

Short technical summary and product information.

The NVMJS1D5N04CLTWG from On Semiconductor is a single N-Channel Power MOSFET. It is designed with a small footprint (5x6 mm) and features low RDS(on) to minimize conduction losses and low QG and capacitance to minimize driver losses.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of 40V, a maximum continuous drain current of 200A at 25°C case temperature, and a maximum on-resistance of 1.4mOhm at 50A and 10V gate drive. The gate-to-source voltage is rated at ±20V, with a gate threshold voltage of 2V at 130µA.

 

This MOSFET operates within a junction and storage temperature range of -55°C to +175°C. It is available in the LFPAK8 package, which is an industry-standard SOT-1205, 8-LFPAK56. The mounting type is surface mount.

 

The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive applications. It is also Pb-Free and RoHS Compliant.

NVMJS1D5N04CLTWG Quick Information

Product Type: MOSFET
Series: NVMJS1D5N04CLTWG
Canonical Name: N-Channel MOSFET
Subcategory: N-Channel

NVMJS1D5N04CLTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMJS1D5N04CLTWG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMJS1D5N04CLTWG Features

  • 40V drain-to-source voltage rating.
  • Low 1.4mOhm on-resistance.
  • High 200A continuous drain current.
  • Compact 8-LFPAK package.
  • AEC-Q101 Qualified.

NVMJS1D5N04CLTWG Applications

  • Ideal for power switching applications.
  • Suitable for automotive designs.
  • Used in high current circuits.
  • Enables compact system designs.

NVMJS1D5N04CLTWG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NVMJS1D5N04CLTWG?

The drain-to-source voltage (Vdss) is 40V.

What is the maximum continuous drain current?

The maximum continuous drain current is 200A at a case temperature of 25°C and 140A at 100°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 1.4mOhm when measured at 50A drain current and 10V gate-to-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NVMJS1D5N04CLTWG in?

It comes in the 8-LFPAK package, also known as SOT-1205, 8-LFPAK56.

Is this MOSFET RoHS compliant?

Yes, this device is Pb-Free and RoHS Compliant.

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