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NVMJS1D4N06CLTWG The ON Semiconductor NVMJS1D4N06CLTWG is an N-Channel MOSFET with a 60V drain-source voltage. It is designed for surface mount applications and offers a current rating of 39A (Ta) / 262A (Tc).
Mfr Part #:

NVMJS1D4N06CLTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMJS1D4N06CLTWG is an N-Channel MOSFET with a 60V drain-source voltage. It is designed for surface mount applications and offers a current rating of 39A (Ta) / 262A (Tc).
✓ Total Stock: 3,000 pcs
$ Price Range: $0.99

NVMJS1D4N06CLTWG Available from 1 distributor

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NVMJS1D4N06CLTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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NVMJS1D4N06CLTWG Description

Short technical summary and product information.

This N-Channel MOSFET from ON Semiconductor, part number NVMJS1D4N06CLTWG, is suitable for various electronic applications. It features a maximum drain-source voltage (Vdss) of 60V and a continuous drain current rating of 39A when measured at the case temperature (Tc) and 262A. The on-resistance (Rds On) is specified as a maximum of 1.3mOhm at 50A and 10V gate-source voltage.

 

The MOSFET has a gate charge (Qg) of 103 nC at 10V and an input capacitance (Ciss) of 7430 pF at 30V. The gate threshold voltage (Vgs(th)) is a maximum of 2V at 280µA. It operates within a temperature range of -55°C to 175°C (TJ).

 

Packaged in an 8-LFPAK (SOT-1205, 8-LFPAK56) for surface mounting, this device offers a power dissipation of 4W (Ta) and 180W (Tc). It is constructed using MOSFET (Metal Oxide) technology.

 

Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH Unaffected status. The part number is also available under the distributor code 488-NVMJS1D4N06CLTWGTR-ND.

NVMJS1D4N06CLTWG Quick Information

Product Type: MOSFET
Canonical Name: NVMJS1D4N06CLTWG N-Channel MOSFET
Subcategory: N-Channel

NVMJS1D4N06CLTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMJS1D4N06CLTWG Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMJS1D4N06CLTWG Features

  • N-Channel MOSFET with 60V drain-source voltage.
  • High current rating: 39A (Ta), 262A (Tc).
  • Low on-resistance: 1.3mOhm at 50A, 10V.
  • Surface mount 8-LFPAK package.
  • Wide operating temperature range: -55°C to 175°C.

NVMJS1D4N06CLTWG Applications

  • Suitable for power switching circuits.
  • Ideal for high-current applications.
  • Used in compact electronic designs.
  • Efficient thermal management required.

NVMJS1D4N06CLTWG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the NVMJS1D4N06CLTWG?

The maximum drain-to-source voltage is 60V.

What is the Rds On (Max) at 50A and 10V Vgs?

The Rds On (Max) is 1.3 milliohms.

What is the maximum gate charge (Qg) at 10V?

The maximum gate charge is 103 nanocoulombs.

What is the operating temperature range of this MOSFET?

It operates over a temperature range of -55°C to 175°C.

What package type is used for this device?

It is packaged in an 8-LFPAK (SOT-1205) surface-mount package.

Is this device RoHS compliant?

Yes, it is RoHS3 compliant.

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