NVMJS1D3N04CTWG The ON Semiconductor NVMJS1D3N04CTWG is an N-Channel MOSFET designed for power applications. It features a 40V drain-to-source voltage and a low on-resistance.
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NVMJS1D3N04CTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMJS1D3N04CTWG is an N-Channel MOSFET designed for power applications. It features a 40V drain-to-source voltage and a low on-resistance.
✓ Total Stock: 192,000 pcs
$ Price Range: $0.99

NVMJS1D3N04CTWG Available from 1 distributor

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NVMJS1D3N04CTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMJS1D3N04CTWG Description

Short technical summary and product information.

The ON Semiconductor NVMJS1D3N04CTWG is a single N-Channel MOSFET designed for power applications requiring efficient switching and low conduction losses. It boasts a drain-to-source voltage (Vdss) of 40V and a maximum on-resistance (Rds(on)) of 1.3mOhm at a gate-to-source voltage (Vgs) of 10V and a drain current (Id) of 50A.

 

This MOSFET offers a continuous drain current of up to 235A when measured at the case temperature (Tc) of 25°C, and 41A when measured at the ambient temperature (Ta) of 25°C. Its power dissipation is rated at 128W (Tc) and 3.8W (Ta) at 25°C. The operating temperature range is from -55°C to 175°C.

 

Packaged in an 8-LFPAK (SOT-1205, 8-LFPAK56) with a surface mount type, the NVMJS1D3N04CTWG is suitable for compact designs. Key electrical characteristics include an input capacitance (Ciss) of 4300 pF at 25V and a gate charge (Qg) of 65 nC at 10V. The device is AEC-Q101 qualified and RoHS compliant.

NVMJS1D3N04CTWG Quick Information

Product Type: MOSFET
Series: NVMJS1D3N04CTWG
Canonical Name: N-Channel MOSFET
Subcategory: N-Channel

NVMJS1D3N04CTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMJS1D3N04CTWG Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMJS1D3N04CTWG Features

  • 40V drain-to-source voltage rating.
  • Low 1.3mOhm on-resistance.
  • High 235A continuous drain current.
  • Compact 8-LFPAK package.
  • AEC-Q101 qualified for reliability.

NVMJS1D3N04CTWG Applications

  • Suitable for high-power switching.
  • Ideal for compact power designs.
  • Used in automotive applications.
  • Efficient conduction loss minimization.

NVMJS1D3N04CTWG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the NVMJS1D3N04CTWG?

The maximum drain-to-source voltage is 40V.

What is the package type of the NVMJS1D3N04CTWG?

It is packaged in an 8-LFPAK surface-mount package.

What is the maximum gate-to-source voltage for this MOSFET?

The maximum gate-to-source voltage is ±20V.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current at 25°C is 41A.

What is the maximum power dissipation at 25°C?

The maximum power dissipation is 128W.

What is the operating temperature range of this device?

-55°C to 175°C.

Is this device RoHS compliant?

Yes, it is RoHS3 compliant.

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