NVMJS1D2N04CLTWG The ON Semiconductor NVMJS1D2N04CLTWG is an N-Channel MOSFET with a 40V drain-source voltage. It offers a low Rds(on) of 1.2mOhm at 10V Vgs and high continuous drain current capabilities.
Mfr Part #:

NVMJS1D2N04CLTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMJS1D2N04CLTWG is an N-Channel MOSFET with a 40V drain-source voltage. It offers a low Rds(on) of 1.2mOhm at 10V Vgs and high continuous drain current capabilities.
✓ Total Stock: 32,892 pcs
$ Price Range: $0.99

NVMJS1D2N04CLTWG Available from 1 distributor

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NVMJS1D2N04CLTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMJS1D2N04CLTWG Description

Short technical summary and product information.

The ON Semiconductor NVMJS1D2N04CLTWG is a power MOSFET designed for efficient power management applications. This N-Channel device features a maximum drain-to-source voltage (Vds) of 40V and a low on-resistance (Rds(on)) of 1.2mOhm at a gate-source voltage (Vgs) of 10V. It can handle a continuous drain current of up to 237A when the case temperature is 25°C, and 41A when the ambient temperature is 25°C.

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2V maximum at 170µA, a gate charge (Qg) of 93nC maximum at 10V, and an input capacitance (Ciss) of 5600pF maximum at 25V. The device operates within a junction temperature range of -55°C to 175°C.

 

Packaged in an 8-LFPAK surface-mount configuration, the NVMJS1D2N04CLTWG is suitable for compact designs. Its low Rds(on) minimizes conduction losses, while low gate charge and capacitance reduce driver losses, making it an efficient choice for various power switching applications.

NVMJS1D2N04CLTWG Quick Information

Product Type: MOSFET
Canonical Name: NVMJS1D2N04CLTWG N-Channel MOSFET
Subcategory: N-Channel

NVMJS1D2N04CLTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMJS1D2N04CLTWG Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMJS1D2N04CLTWG Features

  • 40V drain-to-source voltage rating.
  • Low 1.2mOhm Rds(on) at 10V Vgs.
  • High 237A continuous drain current (Tc).
  • N-Channel MOSFET technology.
  • 8-LFPAK surface mount package.

NVMJS1D2N04CLTWG Applications

  • Efficient power switching applications.
  • Compact design solutions.
  • Power management circuits.
  • High current applications.

NVMJS1D2N04CLTWG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NVMJS1D2N04CLTWG?

The drain-to-source voltage (Vds) is 40V.

What is the maximum on-resistance of the NVMJS1D2N04CLTWG?

The maximum on-resistance is 1.2mOhm at a drain current of 50A and gate-source voltage of 10V.

What is the continuous drain current for the NVMJS1D2N04CLTWG?

The continuous drain current is 237A at a case temperature of 25°C, and 41A at an ambient temperature of 25°C.

What is the operating temperature range for this MOSFET?

The operating junction temperature range is -55°C to 175°C.

What package type is the NVMJS1D2N04CLTWG supplied in?

It is supplied in an 8-LFPAK surface mount package.

Is the NVMJS1D2N04CLTWG RoHS compliant?

Yes, the device is RoHS compliant.

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