| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This N-Channel MOSFET from ON Semiconductor, part number NVMJS0D8N04CLTWG, is designed for surface mount applications. It offers a drain-source voltage of 40V and can handle continuous drain currents of 56A under typical conditions and up to 368A under case temperature conditions.
The device features a low on-resistance of 0.72mOhm at 50A and 10V Vgs. It has a gate charge of 162nC and an input capacitance of 9600pF. The operating temperature range is -55°C to 175°C.
Packaged in an 8-LFPAK (SOT-1205, 8-LFPAK56), this MOSFET is suitable for various power management applications. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles.
Key electrical characteristics include a maximum gate-source voltage of ±20V and a gate threshold voltage of 2V at 250µA. Power dissipation is rated at 4.2W (Ta) and 180W (Tc).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum operating voltage is 40V.
It comes in an 8-LFPAK (SOT-1205) surface-mount package.
The maximum continuous drain current at Ta is 56A.
The maximum pulsed drain current is 368A.
The Rds On maximum is 0.72 milliohm.
The maximum gate charge is 162 nanocoulombs.
-55°C to 175°C.