NVMJS0D8N04CLTWG The ON Semiconductor NVMJS0D8N04CLTWG is an N-Channel MOSFET with a 40V drain-source voltage. It features a surface mountable 8-LFPAK package and operates from -55°C to 175°C.
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NVMJS0D8N04CLTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMJS0D8N04CLTWG is an N-Channel MOSFET with a 40V drain-source voltage. It features a surface mountable 8-LFPAK package and operates from -55°C to 175°C.
✓ Total Stock: 9,000 pcs
$ Price Range: $0.99

NVMJS0D8N04CLTWG Available from 1 distributor

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NVMJS0D8N04CLTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMJS0D8N04CLTWG Description

Short technical summary and product information.

This N-Channel MOSFET from ON Semiconductor, part number NVMJS0D8N04CLTWG, is designed for surface mount applications. It offers a drain-source voltage of 40V and can handle continuous drain currents of 56A under typical conditions and up to 368A under case temperature conditions.

 

The device features a low on-resistance of 0.72mOhm at 50A and 10V Vgs. It has a gate charge of 162nC and an input capacitance of 9600pF. The operating temperature range is -55°C to 175°C.

 

Packaged in an 8-LFPAK (SOT-1205, 8-LFPAK56), this MOSFET is suitable for various power management applications. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles.

 

Key electrical characteristics include a maximum gate-source voltage of ±20V and a gate threshold voltage of 2V at 250µA. Power dissipation is rated at 4.2W (Ta) and 180W (Tc).

NVMJS0D8N04CLTWG Quick Information

Product Type: MOSFET
Series: NVMJS0D8N04CLTWG
Canonical Name: N-Channel MOSFET
Subcategory: Single

NVMJS0D8N04CLTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMJS0D8N04CLTWG Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMJS0D8N04CLTWG Features

  • N-Channel MOSFET with 40V drain-source voltage.
  • High continuous drain current capability.
  • Low on-resistance of 0.72mOhm at 50A.
  • Surface mount 8-LFPAK package.
  • Wide operating temperature range.

NVMJS0D8N04CLTWG Applications

  • Suitable for power switching circuits.
  • Used in high-current applications.
  • Ideal for compact power designs.
  • Efficient power management solutions.

NVMJS0D8N04CLTWG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum operating voltage of the NVMJS0D8N04CLTWG?

The maximum operating voltage is 40V.

What package does the NVMJS0D8N04CLTWG come in?

It comes in an 8-LFPAK (SOT-1205) surface-mount package.

What is the maximum drain current at Ta?

The maximum continuous drain current at Ta is 56A.

What is the maximum pulsed drain current?

The maximum pulsed drain current is 368A.

What is the Rds On value at Vgs=10V?

The Rds On maximum is 0.72 milliohm.

What is the gate charge at Vgs=10V?

The maximum gate charge is 162 nanocoulombs.

What is the operating temperature range?

-55°C to 175°C.

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