NVMFWS027N10MCLT1G The NVMFWS027N10MCLT1G is an N-Channel MOSFET from ON Semiconductor with a 100V drain-to-source voltage and 26mOhm maximum on-resistance. It is available in a Surface Mount, Wettable Flank package.
Mfr Part #:

NVMFWS027N10MCLT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NVMFWS027N10MCLT1G is an N-Channel MOSFET from ON Semiconductor with a 100V drain-to-source voltage and 26mOhm maximum on-resistance. It is available in a Surface Mount, Wettable Flank package.
✓ Total Stock: 13,500 pcs
$ Price Range: $0.99

NVMFWS027N10MCLT1G Available from 1 distributor

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NVMFWS027N10MCLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFWS027N10MCLT1G Description

Short technical summary and product information.

The NVMFWS027N10MCLT1G is a single N-Channel MOSFET manufactured by ON Semiconductor. It offers a drain-to-source voltage (Vdss) of 100V and a low on-resistance (Rds On) of 26mOhm at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 7A. The device features a maximum gate charge (Qg) of 11.5 nC at 10V and an input capacitance (Ciss) of 800 pF at 50V.

 

This MOSFET is designed for surface mounting and features wettable flanks, making it suitable for compact designs. It operates within a temperature range of -55°C to 175°C. The continuous drain current is rated at 28A when measured at the case temperature (Tc) and 7.9A when measured at the ambient temperature (Ta). Power dissipation is 46W at Tc and 3.5W at Ta.

 

Key electrical characteristics include a gate-to-source voltage (Vgs) range of ±20V and a gate-source threshold voltage (Vgs(th)) of 3V at 38µA. The technology used is MOSFET (Metal Oxide). This component is identified by its supplier part number 488-NVMFWS027N10MCLT1GTR-ND.

NVMFWS027N10MCLT1G Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET
Subcategory: Single

NVMFWS027N10MCLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFWS027N10MCLT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFWS027N10MCLT1G Features

  • 100V drain-to-source voltage rating.
  • Low 26mOhm on-resistance at 10V.
  • High 28A continuous drain current.
  • Surface mount wettable flank package.
  • Wide -55°C to 175°C operating temperature.

NVMFWS027N10MCLT1G Applications

  • Suitable for compact power designs.
  • Efficient conduction loss minimization.
  • Low driver loss applications.
  • Automotive AEC-Q101 qualified.

NVMFWS027N10MCLT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVMFWS027N10MCLT1G?

The drain-to-source voltage (Vdss) is 100V.

What is the maximum on-resistance for this MOSFET?

The maximum on-resistance (Rds On) is 26mOhm at 7A drain current and 10V gate-source voltage.

What is the continuous drain current rating?

The continuous drain current is 28A when measured at the case temperature and 7.9A when measured at the ambient temperature.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +175°C.

What type of package is the NVMFWS027N10MCLT1G in?

It is supplied in an 8-PowerTDFN, 5-Lead package with wettable flanks.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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