NVMFWS025P04M8LT1G This P-Channel MOSFET from ON Semiconductor offers a -40V drain-to-source voltage and low on-resistance. It is suitable for surface mount applications.
Mfr Part #:

NVMFWS025P04M8LT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
This P-Channel MOSFET from ON Semiconductor offers a -40V drain-to-source voltage and low on-resistance. It is suitable for surface mount applications.
✓ Total Stock: 8,988 pcs
$ Price Range: $0.99

NVMFWS025P04M8LT1G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
8,988 pcs
8988 pcs On Request 1 On Request On Request On Request On Request On Request

NVMFWS025P04M8LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFWS025P04M8LT1G Description

Short technical summary and product information.

The NVMFWS025P04M8LT1G is a P-Channel MOSFET from ON Semiconductor designed for power applications. It features a maximum drain-to-source voltage of -40V and a low on-resistance of 23mOhm at 15A and 10V gate drive. The continuous drain current is rated at 34.6A when measured at the case temperature (Tc=25°C) and 9.4A at ambient temperature (Ta=25°C).

 

This MOSFET is housed in a compact 5x6mm DFN package, specifically an 8-PowerTDFN with 5 leads, designed for surface mounting. It operates within a wide temperature range of -55°C to 175°C. Key electrical characteristics include a gate-to-source voltage range of ±20V and a gate threshold voltage of 2.4V at 255µA. The device also boasts low capacitance and low RDS(on) to minimize conduction and driver losses.

 

It is AEC-Q101 qualified and PPAP capable, indicating suitability for automotive applications. The device is Pb-free and RoHS compliant. Its small footprint makes it ideal for compact designs where space is a constraint.

NVMFWS025P04M8LT1G Quick Information

Product Type: MOSFET
Series: MV8
Canonical Name: P-Channel MOSFET
Subcategory: Single

NVMFWS025P04M8LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFWS025P04M8LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFWS025P04M8LT1G Features

  • P-Channel MOSFET with -40V Vds.
  • Low 23mOhm Rds On at 15A.
  • High 34.6A continuous drain current.
  • Compact 5x6mm DFN package.
  • AEC-Q101 Qualified.

NVMFWS025P04M8LT1G Applications

  • Suitable for power switching.
  • Ideal for compact designs.
  • Used in automotive applications.
  • Low conduction loss designs.

NVMFWS025P04M8LT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for this MOSFET?

-40 V

What is the maximum continuous drain current at case temperature?

-34.6 A

What is the maximum on-resistance of this P-Channel MOSFET?

23 mOhm

What is the operating temperature range?

-55°C to 175°C

What package type is this MOSFET in?

8-PowerTDFN, 5 Leads

Is this MOSFET RoHS compliant?

RoHS Compliant

Home
Account

Categories