NVMFWS020N06CT1G The ON Semiconductor NVMFWS020N06CT1G is an N-Channel MOSFET designed for power applications. It features a 60V drain-source voltage and a surface mount package.
Mfr Part #:

NVMFWS020N06CT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMFWS020N06CT1G is an N-Channel MOSFET designed for power applications. It features a 60V drain-source voltage and a surface mount package.
✓ Total Stock: 42,000 pcs
$ Price Range: $0.99

NVMFWS020N06CT1G Available from 1 distributor

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NVMFWS020N06CT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFWS020N06CT1G Description

Short technical summary and product information.

The ON Semiconductor NVMFWS020N06CT1G is a single N-Channel MOSFET from the Metal Oxide technology family. It is designed for power switching applications, offering a drain-source voltage (Vdss) of 60V and continuous drain currents of 9A (at Ta) and 28A (at Tc).

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 19.6mOhm at 4A and 10V, a gate threshold voltage (Vgs(th)) of 4V at 20µA, and a maximum gate-to-source voltage of ±20V. Input capacitance (Ciss) is rated at 355pF at 30V, and gate charge (Qg) is 5.8nC at 10V.

 

This MOSFET operates within a wide temperature range of -55°C to 175°C (TJ). It is housed in an 8-PowerTDFN, 5-Lead package, suitable for surface mounting. The component has a maximum power dissipation of 3.4W (Ta) and 31W (Tc).

 

Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are unverified.

NVMFWS020N06CT1G Quick Information

Product Type: MOSFET
Canonical Name: NVMFWS020N06CT1G N-Channel MOSFET
Subcategory: N-Channel

NVMFWS020N06CT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFWS020N06CT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFWS020N06CT1G Features

  • 60V drain-source voltage rating.
  • 9A/28A continuous drain current.
  • Low 19.6mOhm max Rds On.
  • Surface mount 5-DFN package.
  • Wide -55°C to 175°C operating temperature.

NVMFWS020N06CT1G Applications

  • Suitable for power switching.
  • Used in power management circuits.
  • Ideal for DC-DC converters.
  • Applicable in motor control.

NVMFWS020N06CT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the NVMFWS020N06CT1G?

The drain-source voltage (Vdss) for the NVMFWS020N06CT1G is 60V.

What is the maximum continuous drain current?

The continuous drain current is 9A when measured at the ambient temperature (Ta) and 28A when measured at the case temperature (Tc).

What is the on-resistance of this MOSFET?

The maximum on-resistance (Rds On) is 19.6mOhm when tested at 4A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range for this device is -55°C to 175°C (TJ).

What package type is the NVMFWS020N06CT1G in?

The NVMFWS020N06CT1G is supplied in an 8-PowerTDFN, 5-Lead package suitable for surface mounting.

Is this MOSFET RoHS compliant?

The RoHS status is listed as RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level (MSL) is 1.

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