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NVMFWS016N10MCLT1G The ON Semiconductor NVMFWS016N10MCLT1G is an N-Channel MOSFET with a 100V drain-to-source voltage and a continuous drain current of 46A at 25°C case temperature. It features a low on-resistance of 14mOhm at 11A and 10V gate drive.
Mfr Part #:

NVMFWS016N10MCLT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMFWS016N10MCLT1G is an N-Channel MOSFET with a 100V drain-to-source voltage and a continuous drain current of 46A at 25°C case temperature. It features a low on-resistance of 14mOhm at 11A and 10V gate drive.
✓ Total Stock: 18,000 pcs
$ Price Range: $0.99

NVMFWS016N10MCLT1G Available from 1 distributor

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✓ Non-Authorised
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18,000 pcs
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NVMFWS016N10MCLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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NVMFWS016N10MCLT1G Description

Short technical summary and product information.

The ON Semiconductor NVMFWS016N10MCLT1G is a single N-Channel Power MOSFET designed for efficient power management applications. It offers a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of up to 46A when measured at a case temperature of 25°C, and 10.9A when measured at an ambient temperature of 25°C.

 

This MOSFET boasts a low on-resistance (Rds(on)) of 14mOhm at a gate-source voltage (Vgs) of 10V and a drain current of 11A, minimizing conduction losses. It also features a low gate charge (Qg) of 19nC at 10V, reducing driver losses. The device operates within a wide temperature range of -55°C to 175°C.

 

Packaged in an 8-PowerTDFN, 5-lead (4.9x5.9) wettable flank configuration, this surface-mount device is suitable for compact designs. Its AEC-Q101 qualification indicates suitability for automotive applications. The device is Pb-free, Halogen-free, Beryllium-free, and RoHS compliant.

NVMFWS016N10MCLT1G Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET
Subcategory: Single

NVMFWS016N10MCLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFWS016N10MCLT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFWS016N10MCLT1G Features

  • 100V drain-to-source voltage rating.
  • 46A continuous drain current capability.
  • Low 14mOhm on-resistance.
  • Compact 8-PowerTDFN wettable flank package.
  • AEC-Q101 qualified for automotive use.

NVMFWS016N10MCLT1G Applications

  • Suitable for power switching circuits.
  • Ideal for compact power designs.
  • Used in automotive applications.
  • Efficient conduction loss reduction.

NVMFWS016N10MCLT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVMFWS016N10MCLT1G?

The maximum drain-to-source voltage (Vdss) is 100V.

What is the continuous drain current at 25°C case temperature?

The continuous drain current at 25°C case temperature is 46A.

What is the maximum on-resistance (Rds(on))?

The maximum on-resistance is 14mOhm at 11A and 10V gate drive.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 175°C.

What type of package does the NVMFWS016N10MCLT1G use?

It uses an 8-PowerTDFN, 5-lead package with wettable flanks.

Is this MOSFET AEC-Q101 qualified?

Yes, this device is AEC-Q101 qualified.

What are the RoHS and REACH statuses?

The device is RoHS3 Compliant and REACH Unaffected.

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