| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16,500 pcs
|
16500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVMFWS016N06CT1G is a single N-Channel MOSFET from ON Semiconductor, designed for various power switching applications. It features a maximum drain-source voltage (Vdss) of 60V and a continuous drain current capability of 10A when measured at the case temperature (Tc) and 33A when measured at the ambient temperature (Ta).
Key electrical characteristics include a maximum on-resistance (Rds On) of 15.6mOhm at 5A and 10V, a gate charge (Qg) of 6.9nC at 10V, and an input capacitance (Ciss) of 489pF at 30V. The gate-to-source voltage (Vgs) has a maximum rating of ±20V, and the gate threshold voltage (Vgs(th)) is 4V at 25µA.
This MOSFET operates within a temperature range of -55°C to 175°C (TJ). It is housed in an 8-PowerTDFN, 5-lead package with a surface mount type. The supplier's package code is 5-DFN (5x6) (8-SOFL).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 60V.
The continuous drain current is 10A (Ta) and 33A (Tc).
The maximum on-resistance (Rds On) is 15.6mOhm at 5A and 10V.
The operating temperature range is -55°C to 175°C (TJ).
It is in an 8-PowerTDFN, 5-lead package designed for surface mounting.