Mfr Part #:

NVMFWS014P04M8LT1G

The NVMFWS014P04M8LT1G is a P-Channel MOSFET from On Semiconductor. It features a -40V drain-to-source voltage and a low on-resistance.

✓ Total Stock: 3,000 pcs

$ Price Range: $0.21

NVMFWS014P04M8LT1G Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	3,000 pcs On Request	3000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

NVMFWS014P04M8LT1G Description

Short technical summary and product information.

This P-Channel MOSFET from On Semiconductor, part number NVMFWS014P04M8LT1G, is designed for power applications requiring efficient switching. It offers a drain-to-source voltage (Vdss) of -40V and a low on-resistance (Rds(on)) of 13.8mOhm at 15A and 10V gate-to-source voltage. The continuous drain current is rated at 52.1A under case temperature conditions and 12.5A under ambient conditions.

The device is housed in a compact 8-PowerTDFN, 5-lead package, suitable for surface mounting. It operates within a wide temperature range of -55°C to +175°C. Key electrical characteristics include a gate threshold voltage of 2.4V, input capacitance of 1734pF, and gate charge of 26.5nC. The MOSFET is AEC-Q101 qualified and RoHS compliant, making it suitable for demanding applications.

NVMFWS014P04M8LT1G Quick Information

Product Type: MOSFET

Canonical Name: P-Channel MOSFET

Subcategory: Single

NVMFWS014P04M8LT1G Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Pb-Free

NVMFWS014P04M8LT1G Estimated Pricing

Qty	Low	High
1+	$0.21	$0.21

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFWS014P04M8LT1G Features

P-Channel MOSFET for power applications.
-40V drain-to-source voltage rating.
Low on-resistance of 13.8mOhm at 15A, 10V.
High continuous drain current capability.
Compact 8-PowerTDFN surface mount package.

NVMFWS014P04M8LT1G Applications

Suitable for power switching circuits.
Ideal for high-efficiency designs.
Used in battery management systems.
Applicable in load switch circuits.

NVMFWS014P04M8LT1G FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-to-source voltage (Vdss) for the NVMFWS014P04M8LT1G MOSFET?

The drain-to-source voltage (Vdss) for the NVMFWS014P04M8LT1G MOSFET is -40 V.

What is the maximum on-resistance (Rds(on)) of the NVMFWS014P04M8LT1G?

The maximum on-resistance (Rds(on)) of the NVMFWS014P04M8LT1G is 13.8mOhm at 15A and 10V.

What is the continuous drain current (Id) for the NVMFWS014P04M8LT1G at 25°C case temperature?

The continuous drain current (Id) for the NVMFWS014P04M8LT1G at 25°C case temperature is 52.1A.

What is the operating temperature range for the NVMFWS014P04M8LT1G MOSFET?

The operating temperature range for the NVMFWS014P04M8LT1G MOSFET is -55°C to +175°C.

What type of MOSFET is the NVMFWS014P04M8LT1G?

The NVMFWS014P04M8LT1G is a P-Channel MOSFET.

What package type is the NVMFWS014P04M8LT1G MOSFET supplied in?

The NVMFWS014P04M8LT1G MOSFET is supplied in an 8-PowerTDFN, 5-lead package.

Is the NVMFWS014P04M8LT1G RoHS compliant?

Yes, the NVMFWS014P04M8LT1G is RoHS3 Compliant.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	12.5A (Ta), 52.1A (Tc)
Drain to Source Voltage (Vdss)	-40 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	26.5 nC @ 10 V
Halogen Free	Halogen Free/BFR-Free
Input Capacitance (Ciss) (Max) @ Vds	1734 pF @ 20 V
Lead Spacing	5 mm
Lead Style	S08Fl
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	3.6W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs	13.8mOhm @ 15A, 10V
Supplier Device Package	5-DFN (5x6) (8-SOFL)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.4V @ 420µA