| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVMFWS005N10MCLT1G is an N-Channel MOSFET manufactured by On Semiconductor. It features a drain-to-source voltage (Vdss) of 100V and a maximum on-resistance (Rds(on)) of 5.1mOhm at 34A and 10V gate-source voltage. The continuous drain current is rated at 18.4A at 25°C ambient temperature and 108A at 25°C case temperature.
This MOSFET operates within a wide temperature range of -55°C to 175°C (TJ). It has a gate threshold voltage (Vgs(th)) of 3V at 192µA and a maximum gate-to-source voltage of ±20V. The input capacitance (Ciss) is a maximum of 4100 pF at 50V, and the gate charge (Qg) is a maximum of 55 nC at 10V.
The device is housed in an 8-PowerTDFN, 5-lead package, specifically a 5-DFNW (4.9x5.9) (8-SOFL-WF) supplier device package. It is designed for surface mounting with wettable flank termination. The maximum power dissipation is 3.8W at 25°C ambient and 131W at 25°C case temperature.
Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. It is also Pb-Free and Halogen Free, verified by the datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 100V.
The maximum on-resistance (Rds On) is 5.1mOhm at 34A drain current and 10V gate-source voltage.
The continuous drain current is 18.4A at 25°C ambient temperature and 108A at 25°C case temperature.
The operating junction temperature range is -55°C to 175°C.
It is supplied in an 8-PowerTDFN, 5-lead package, specifically a 5-DFNW (4.9x5.9) (8-SOFL-WF) supplier device package.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.