NVMFWS004N10MCT1G The On Semiconductor NVMFWS004N10MCT1G is an N-Channel MOSFET designed for power applications. It features a 100V drain-to-source voltage and low on-resistance.
Mfr Part #:

NVMFWS004N10MCT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVMFWS004N10MCT1G is an N-Channel MOSFET designed for power applications. It features a 100V drain-to-source voltage and low on-resistance.
✓ Total Stock: 7,500 pcs
$ Price Range: $0.99

NVMFWS004N10MCT1G Available from 1 distributor

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✓ Non-Authorised
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7,500 pcs
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NVMFWS004N10MCT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFWS004N10MCT1G Description

Short technical summary and product information.

The NVMFWS004N10MCT1G is an N-Channel MOSFET from On Semiconductor, designed for efficient power management. It offers a high drain-to-source voltage rating of 100V and a low on-resistance of 3.9 mOhm at 48A and 10V gate-source voltage, minimizing conduction losses.

 

This MOSFET is suitable for applications requiring significant current handling, with a continuous drain current of up to 138A at 25°C case temperature. Its operating temperature range is from -55°C to +175°C (TJ).

 

The device comes in a compact 5-DFNW (4.9x5.9) package, also known as 8-PowerTDFN with 5 leads, featuring wettable flank mounting for surface mount assembly. It is AEC-Q101 qualified and RoHS compliant.

 

Key electrical characteristics include a gate threshold voltage of 4V at 270µA, a maximum gate-to-source voltage of ±20V, and a maximum input capacitance of 3600 pF at 50V. The maximum power dissipation is 164W at 25°C case temperature.

NVMFWS004N10MCT1G Quick Information

Product Type: MOSFET
Canonical Name: NVMFWS004N10MCT1G N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

NVMFWS004N10MCT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NVMFWS004N10MCT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFWS004N10MCT1G Features

  • 100V drain-to-source voltage rating.
  • Low 3.9mOhm on-resistance.
  • High 138A continuous drain current.
  • Compact 5-DFNW package.
  • AEC-Q101 qualified for automotive.

NVMFWS004N10MCT1G Applications

  • Ideal for power switching circuits.
  • Suitable for high current applications.
  • Used in automotive systems.
  • Efficient power management solutions.

NVMFWS004N10MCT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVMFWS004N10MCT1G?

The maximum drain-to-source voltage (Vdss) is 100V.

What is the typical on-resistance of the NVMFWS004N10MCT1G?

The maximum on-resistance (Rds(on)) is 3.9mOhm at 48A drain current and 10V gate-source voltage.

What is the continuous drain current rating?

The continuous drain current is 138A at 25°C case temperature and 21A at 25°C ambient temperature.

What is the operating temperature range?

The operating junction temperature range is -55°C to +175°C.

What package type is the NVMFWS004N10MCT1G in?

It is supplied in an 8-PowerTDFN, 5-Lead package, specifically a 5-DFNW (4.9x5.9) with wettable flanks.

Is this MOSFET AEC-Q101 qualified?

Yes, the NVMFWS004N10MCT1G is AEC-Q101 qualified.

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