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NVMFWD016N06CT1G The ON Semiconductor NVMFWD016N06CT1G is a dual N-channel MOSFET with a 60V drain-to-source voltage. It is designed for surface mount applications.
Mfr Part #:

NVMFWD016N06CT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMFWD016N06CT1G is a dual N-channel MOSFET with a 60V drain-to-source voltage. It is designed for surface mount applications.
✓ Total Stock: 15,000 pcs
$ Price Range: $0.99

NVMFWD016N06CT1G Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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15,000 pcs
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NVMFWD016N06CT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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NVMFWD016N06CT1G Description

Short technical summary and product information.

The ON Semiconductor NVMFWD016N06CT1G is a dual N-channel MOSFET array designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 60V and can handle continuous drain currents of 9A at ambient temperature (Ta) and 32A at case temperature (Tc).

 

With a low on-resistance of 16.3mOhm at 5A and 10V, this MOSFET minimizes power loss during operation. The gate charge (Qg) is 6.9nC at 10V, and the gate threshold voltage (Vgs(th)) is a maximum of 4V at 25µA. The input capacitance (Ciss) is 489pF at 30V.

 

This device operates within a temperature range of -55°C to 175°C (TJ). It is housed in an 8-PowerTDFN package, specifically an 8-DFN (5x6) Dual Flag (SO8FL-Dual) configuration, suitable for surface mounting. The power dissipation is rated at 3.1W at ambient temperature and 36W at case temperature.

NVMFWD016N06CT1G Quick Information

Product Type: MOSFET Array
Canonical Name: NVMFWD016N06CT1G
Subcategory: Arrays

NVMFWD016N06CT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFWD016N06CT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFWD016N06CT1G Features

  • Dual N-channel MOSFET array.
  • 60V drain-to-source voltage.
  • Low on-resistance of 16.3mOhm.
  • Surface mount 8-PowerTDFN package.
  • Wide operating temperature range.

NVMFWD016N06CT1G Applications

  • Power switching applications.
  • Load switch circuits.
  • DC-DC converters.
  • Motor control.
  • Battery management systems.

NVMFWD016N06CT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVMFWD016N06CT1G?

The maximum drain-to-source voltage (Vdss) for the NVMFWD016N06CT1G is 60V.

What is the continuous drain current of the NVMFWD016N06CT1G?

The continuous drain current is 9A at ambient temperature and 32A at case temperature.

What is the on-resistance of the NVMFWD016N06CT1G?

The maximum on-resistance (Rds On) is 16.3mOhm at 5A drain current and 10V gate-source voltage.

What package type is the NVMFWD016N06CT1G available in?

The NVMFWD016N06CT1G is available in an 8-PowerTDFN package, also known as 8-DFN (5x6) Dual Flag (SO8FL-Dual).

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 175°C (TJ).

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