NVMFSW6D1N08HT1G The On Semiconductor NVMFSW6D1N08HT1G is an N-Channel MOSFET designed for power applications. It offers 80V drain-to-source voltage and low on-resistance.
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NVMFSW6D1N08HT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVMFSW6D1N08HT1G is an N-Channel MOSFET designed for power applications. It offers 80V drain-to-source voltage and low on-resistance.
✓ Total Stock: 32,118 pcs
$ Price Range: $0.99

NVMFSW6D1N08HT1G Available from 1 distributor

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NVMFSW6D1N08HT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFSW6D1N08HT1G Description

Short technical summary and product information.

The NVMFSW6D1N08HT1G is an N-Channel MOSFET from On Semiconductor, designed for efficient power management. It features a maximum drain-to-source voltage of 80V and a low on-resistance of 5.5mOhm at 20A and 10V gate drive voltage. This MOSFET can handle continuous drain currents of up to 89A at case temperature and 17A at ambient temperature, with a maximum power dissipation of 104W (Tc) or 3.8W (Ta).

 

With a gate-to-source voltage range of ±20V and a threshold voltage of 4V at 120µA, it offers flexibility in driving. The component has an input capacitance of 2085 pF and a gate charge of 32 nC, contributing to minimized driver losses. It operates within a temperature range of -55°C to 175°C.

 

Packaged in a compact 5-DFN (5x6) (8-SOFL) surface-mount case, the NVMFSW6D1N08HT1G is suitable for designs requiring a small footprint. It is Pb-free and Halogen-free, aligning with environmental compliance standards. Typical applications include synchronous rectification and AC-DC/DC-DC power supplies.

NVMFSW6D1N08HT1G Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET
Subcategory: Single

NVMFSW6D1N08HT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NVMFSW6D1N08HT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFSW6D1N08HT1G Features

  • 80V drain-to-source voltage rating.
  • Low 5.5mOhm on-resistance.
  • High 89A continuous drain current.
  • Compact 5-DFN (5x6) package.
  • Operates from -55°C to 175°C.

NVMFSW6D1N08HT1G Applications

  • Suitable for synchronous rectification.
  • Used in AC-DC power supplies.
  • Applicable to DC-DC converters.
  • Ideal for load switch applications.

NVMFSW6D1N08HT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVMFSW6D1N08HT1G MOSFET?

The maximum drain-to-source voltage is 80V.

What is the typical on-resistance of the NVMFSW6D1N08HT1G?

The maximum on-resistance is 5.5mOhm at 20A and 10V.

What is the continuous drain current rating for the NVMFSW6D1N08HT1G?

It has a continuous drain current rating of 89A at the case temperature and 17A at ambient temperature.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 175°C.

What package type is the NVMFSW6D1N08HT1G MOSFET supplied in?

It is supplied in a 5-DFN (5x6) (8-SOFL) package.

Is the NVMFSW6D1N08HT1G RoHS compliant?

Yes, it is RoHS3 Compliant.

Is this MOSFET lead-free?

Yes, it is Pb-Free.

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