NVMFS9D6P04M8LT1G The ON Semiconductor NVMFS9D6P04M8LT1G is a P-Channel MOSFET with a drain-to-source voltage of -40V and a maximum on-resistance of 9.5mOhm at 20A, 10V. It is supplied in a surface-mount 8-PowerTDFN package.
Mfr Part #:

NVMFS9D6P04M8LT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMFS9D6P04M8LT1G is a P-Channel MOSFET with a drain-to-source voltage of -40V and a maximum on-resistance of 9.5mOhm at 20A, 10V. It is supplied in a surface-mount 8-PowerTDFN package.
✓ Total Stock: 106,880 pcs
$ Price Range: $0.99

NVMFS9D6P04M8LT1G Available from 1 distributor

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NVMFS9D6P04M8LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS9D6P04M8LT1G Description

Short technical summary and product information.

The ON Semiconductor NVMFS9D6P04M8LT1G is a P-Channel MOSFET designed for power applications. It features a drain-to-source voltage (Vdss) of -40V and a low on-resistance (Rds On) of 9.5mOhm at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 20A. The maximum continuous drain current is 77A at 25°C case temperature.

 

This MOSFET operates within a junction temperature range of -55°C to +175°C. It has an input capacitance (Ciss) of 2002 pF at 20V and a gate charge (Qg) of 14.47 nC at 10V. The device is packaged in an 8-PowerTDFN, 5-lead surface-mount package (5-DFN 5x6), suitable for compact designs.

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2.4V maximum at 580µA. Power dissipation is rated at 75W at 25°C case temperature and 3.7W at 25°C ambient temperature. The device is AEC-Q101 qualified and RoHS compliant.

NVMFS9D6P04M8LT1G Quick Information

Product Type: MOSFET
Canonical Name: NVMFS9D6P04M8LT1G P-Channel MOSFET
Subcategory: P-Channel

NVMFS9D6P04M8LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFS9D6P04M8LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS9D6P04M8LT1G Features

  • P-Channel MOSFET with -40V drain-source voltage.
  • Low on-resistance of 9.5mOhm at 20A, 10V.
  • High continuous drain current of 77A (Tc=25°C).
  • Operates from -55°C to +175°C junction temperature.
  • Surface mount 8-PowerTDFN package for compact designs.

NVMFS9D6P04M8LT1G Applications

  • Suitable for high-current power switching applications.
  • Ideal for RF power amplifier circuits.
  • Used in motor drive and inverter systems.
  • Applicable in portable and compact electronic devices.

NVMFS9D6P04M8LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVMFS9D6P04M8LT1G?

The drain-to-source voltage (Vdss) is -40 V.

What is the maximum on-resistance for the NVMFS9D6P04M8LT1G?

The maximum on-resistance is 9.5mOhm at 20A drain current and 10V gate-source voltage.

What is the continuous drain current rating?

The continuous drain current is 77A at 25°C case temperature and 17.1A at 25°C ambient temperature.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +175°C.

What type of package is the NVMFS9D6P04M8LT1G in?

It is supplied in an 8-PowerTDFN, 5-lead surface-mount package.

Is the NVMFS9D6P04M8LT1G RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1 Unlimited.

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