NVMFS6H864NWFT1G The On Semiconductor NVMFS6H864NWFT1G is an N-Channel MOSFET designed for power applications. It features an 80V drain-source voltage and a low Rds On of 32mOhm.
Mfr Part #:

NVMFS6H864NWFT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVMFS6H864NWFT1G is an N-Channel MOSFET designed for power applications. It features an 80V drain-source voltage and a low Rds On of 32mOhm.
✓ Total Stock: 7,500 pcs
$ Price Range: $0.99

NVMFS6H864NWFT1G Available from 1 distributor

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NVMFS6H864NWFT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS6H864NWFT1G Description

Short technical summary and product information.

The NVMFS6H864NWFT1G from On Semiconductor is an N-Channel Power MOSFET designed for efficient power management. It offers a drain-to-source voltage of 80V and a low on-resistance (Rds On) of 32mOhm at 5A and 10V gate drive, minimizing conduction losses.

 

This MOSFET supports continuous drain currents of up to 21A at 25°C case temperature and 6.7A at 25°C ambient temperature. Its power dissipation capabilities are rated at 33W (Tc) and 3.5W (Ta) at 25°C. The device features a small footprint with a 5x6mm DFN package, suitable for compact designs, and includes a wettable flank option for enhanced optical inspection.

 

Key electrical characteristics include an input capacitance of 370pF at 40V and a gate charge of 6.9nC at 10V. The operating temperature range is -55°C to 175°C. The NVMFS6H864NWFT1G is AEC-Q101 qualified and RoHS compliant, making it suitable for demanding applications.

NVMFS6H864NWFT1G Quick Information

Product Type: MOSFET
Canonical Name: NVMFS6H864NWFT1G N-Channel MOSFET
Subcategory: Power MOSFET

NVMFS6H864NWFT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFS6H864NWFT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS6H864NWFT1G Features

  • 80V drain-to-source voltage rating.
  • Low 32mOhm Rds On resistance.
  • High 21A continuous drain current.
  • Compact 5x6mm DFN package.
  • AEC-Q101 qualified for reliability.

NVMFS6H864NWFT1G Applications

  • Suitable for power switching circuits.
  • Ideal for compact electronic designs.
  • Used in automotive applications.
  • Efficient power management solutions.

NVMFS6H864NWFT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVMFS6H864NWFT1G MOSFET?

The drain-to-source voltage (Vdss) is 80V.

What is the maximum Rds On for the NVMFS6H864NWFT1G MOSFET?

The maximum Rds On is 32mOhm when tested at 5A drain current and 10V gate voltage.

What is the continuous drain current rating for the NVMFS6H864NWFT1G?

The continuous drain current is 21A when measured at the case temperature of 25°C, and 6.7A when measured at the ambient temperature of 25°C.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the NVMFS6H864NWFT1G MOSFET supplied in?

It is supplied in an 8-PowerTDFN, 5-lead package, specifically a 5-DFNW (4.9x5.9) (8-SOFL-WF) with wettable flank mounting.

Is the NVMFS6H864NWFT1G RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level is 1.

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