Mfr Part #:

NVMFS6H858NWFT1G

The On Semiconductor NVMFS6H858NWFT1G is an N-Channel MOSFET with a drain-to-source voltage of 80V. It offers low on-resistance and is housed in a compact 5x6mm DFN package.

✓ Total Stock: 21,000 pcs

$ Price Range: $0.99

NVMFS6H858NWFT1G Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	21,000 pcs On Request	21000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

NVMFS6H858NWFT1G Description

Short technical summary and product information.

The NVMFS6H858NWFT1G from On Semiconductor is a single N-Channel MOSFET designed for power applications. It features a drain-to-source voltage (Vdss) of 80V and a low on-resistance (Rds On) of 20.7mOhm at 5A and 10V gate drive.

This MOSFET can handle continuous drain currents of up to 29A at case temperature and 8.4A at ambient temperature. Its power dissipation is rated at 42W (Tc) and 3.5W (Ta). The device operates within a temperature range of -55°C to +175°C.

Designed for compact solutions, it comes in a small 5x6mm DFN package (8-PowerTDFN, 5 Leads) suitable for surface mounting. Key electrical characteristics include a gate charge (Qg) of 8.9nC and input capacitance (Ciss) of 510pF.

The NVMFS6H858NWFT1G is AEC-Q101 qualified and RoHS compliant, making it suitable for demanding automotive and industrial applications requiring efficient power management.

NVMFS6H858NWFT1G Quick Information

Product Type: MOSFET

Canonical Name: NVMFS6H858NWFT1G N-Channel MOSFET

Subcategory: N-Channel

NVMFS6H858NWFT1G Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

NVMFS6H858NWFT1G Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS6H858NWFT1G Features

80V drain-to-source voltage rating.
Low 20.7mOhm Rds On at 10V.
High 29A continuous drain current.
Compact 5x6mm DFN package.
AEC-Q101 qualified and RoHS compliant.

NVMFS6H858NWFT1G Applications

Suitable for power switching applications.
Ideal for compact power supply designs.
Used in automotive systems.
Efficient for motor control circuits.

NVMFS6H858NWFT1G FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source voltage for the NVMFS6H858NWFT1G?

The maximum drain-to-source voltage (Vdss) is 80V.

What is the typical on-resistance of the NVMFS6H858NWFT1G?

The on-resistance (Rds On) is a maximum of 20.7mOhm at 5A and 10V gate drive.

What is the continuous drain current rating?

The continuous drain current is 29A at 25°C case temperature and 8.4A at 25°C ambient temperature.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NVMFS6H858NWFT1G supplied in?

It is supplied in a 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting.

Is the NVMFS6H858NWFT1G RoHS compliant?

Yes, the device is RoHS compliant.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	8.4A (Ta), 29A (Tc)
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.9 nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	510 pF @ 40 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	3.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs	20.7mOhm @ 5A, 10V
Supplier Device Package	5-DFN (5x6) (8-SOFL)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 30µA