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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
46,500 pcs
|
46500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Continuous Drain Current (TC = 25 °C) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drain-to-Source Breakdown Voltage Temperature Coefficient | |
| Drain-to-source breakdown voltage | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Junction to Ambient Thermal Resistance | |
| Junction to Case Thermal Resistance | |
| Lead Spacing | |
| Lead Temperature for Soldering Purposes | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Junction and Storage Temperature Range | |
| Operating Temperature | |
| Pb-Free | |
| Power Dissipation (Max) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Single Pulse Drain-to-Source Avalanche Energy | |
| Source Current (Body Diode) | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Zero Gate Voltage Drain Current (@ VGS = 0 V, VDS = 80 V, TJ = 125 °C) | |
| Zero Gate Voltage Drain Current (@ VGS = 0 V, VDS = 80 V, TJ = 25 °C) |
The NVMFS6H852NLWFT1G is an N-Channel MOSFET from On Semiconductor, designed for power management applications. It offers a drain-to-source voltage of 80V and a low on-resistance of 13.1 mOhm at 10A and 10V Vgs. The continuous drain current is rated at 42A under case temperature conditions and 11A under ambient temperature conditions.
This MOSFET is housed in a compact 5x6mm DFN package, specifically an 8-PowerTDFN with 5 leads, suitable for surface mounting. It operates within a wide temperature range of -55°C to 175°C. Key electrical characteristics include a gate-to-source voltage of ±20V and a gate charge of 17 nC at 10V.
The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and high-reliability applications. It is also Pb-free and RoHS compliant.
With its low conduction losses and compact footprint, the NVMFS6H852NLWFT1G is well-suited for various power switching and control applications where efficiency and space are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 80 V.
The on-resistance is a maximum of 13.1 mOhm at 10A drain current and 10V gate-source voltage.
The continuous drain current is 42A when measured at the case temperature and 11A when measured at the ambient temperature.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in a 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting.
Yes, the device is Pb-free and RoHS compliant.