| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NVMFS6H852NLT1G is a high-performance N-Channel MOSFET suitable for various power management applications. It features a maximum drain-to-source voltage of 80V and can handle a continuous drain current of up to 42A at 25°C case temperature, with a maximum power dissipation of 54W.
This MOSFET boasts low on-resistance, with a maximum of 13.1 mOhm at 10A and 10V Vgs, minimizing conduction losses. It also offers low gate charge and capacitance, contributing to reduced driver losses. The device operates within a wide temperature range of -55°C to 175°C.
Packaged in an 8-PowerTDFN, 5-lead (5x6mm) surface-mount configuration, the NVMFS6H852NLT1G is designed for compact and efficient circuit designs. It is AEC-Q101 qualified and RoHS compliant, making it suitable for demanding automotive and industrial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 80V.
The continuous drain current is 42A at 25°C case temperature and 11A at 25°C ambient temperature.
The Rds On is a maximum of 13.1 mOhm at 10A drain current and 10V gate-source voltage.
The operating junction temperature range is -55°C to 175°C.
It is supplied in an 8-PowerTDFN, 5-lead package, with a supplier device package of 5-DFN (5x6) (8-SOFL).
Yes, this device is RoHS3 Compliant.