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NVMFS6H848NT1G The ON Semiconductor NVMFS6H848NT1G is an 80V N-Channel MOSFET designed for power applications. It offers low Rds(on) and a compact 5x6mm package.
Mfr Part #:

NVMFS6H848NT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMFS6H848NT1G is an 80V N-Channel MOSFET designed for power applications. It offers low Rds(on) and a compact 5x6mm package.
✓ Total Stock: 3,662 pcs
$ Price Range: $0.99

NVMFS6H848NT1G Available from 1 distributor

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3,662 pcs
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NVMFS6H848NT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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NVMFS6H848NT1G Description

Short technical summary and product information.

The ON Semiconductor NVMFS6H848NT1G is an N-Channel MOSFET with a drain-to-source voltage (Vds) of 80V. It features a low on-resistance (Rds(on)) of 9.4mOhm at 10A and 10V gate drive, minimizing conduction losses. The continuous drain current is rated at 57A at 25°C case temperature and 13A at 25°C ambient temperature.

 

This MOSFET is housed in a compact 5x6mm 5-DFN (8-SOFL) surface-mount package, suitable for space-constrained designs. It operates within a temperature range of -55°C to +175°C. The device is AEC-Q101 qualified and RoHS compliant, making it suitable for demanding automotive and industrial applications.

 

Key electrical characteristics include a gate charge (Qg) of 16nC at 10V and an input capacitance (Ciss) of 1180pF at 40V. The device also offers features like wettable flanks for enhanced optical inspection in the NVMFS6H848NWF variant.

NVMFS6H848NT1G Quick Information

Product Type: MOSFET
Canonical Name: NVMFS6H848NT1G N-Channel MOSFET
Subcategory: N-Channel

NVMFS6H848NT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFS6H848NT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS6H848NT1G Features

  • 80V drain-to-source voltage rating.
  • Low 9.4mOhm Rds(on) at 10V.
  • High 57A continuous drain current.
  • Compact 5x6mm 5-DFN package.
  • AEC-Q101 qualified for reliability.

NVMFS6H848NT1G Applications

  • Suitable for power switching circuits.
  • Ideal for compact power designs.
  • Used in automotive applications.
  • Efficient conduction loss minimization.

NVMFS6H848NT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVMFS6H848NT1G?

The drain-to-source voltage (Vds) is 80V.

What is the maximum continuous drain current for the NVMFS6H848NT1G?

The continuous drain current is 57A at 25°C case temperature and 13A at 25°C ambient temperature.

What is the on-resistance of the NVMFS6H848NT1G?

The Rds(on) is a maximum of 9.4mOhm at 10A drain current and 10V gate-to-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NVMFS6H848NT1G in?

It is in a 5x6mm 5-DFN (8-SOFL) package.

Is the NVMFS6H848NT1G RoHS compliant?

Yes, the device is RoHS3 Compliant.

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