NVMFS6H848NLWFT1G The ON Semiconductor NVMFS6H848NLWFT1G is an N-Channel MOSFET designed for power applications. It offers a drain-source voltage of 80V and a continuous drain current of up to 59A.
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NVMFS6H848NLWFT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMFS6H848NLWFT1G is an N-Channel MOSFET designed for power applications. It offers a drain-source voltage of 80V and a continuous drain current of up to 59A.
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NVMFS6H848NLWFT1G Available from 1 distributor

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NVMFS6H848NLWFT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS6H848NLWFT1G Description

Short technical summary and product information.

This N-Channel MOSFET from ON Semiconductor, part number NVMFS6H848NLWFT1G, is designed for efficient power management. It features a high drain-source voltage rating of 80V and can handle a continuous drain current of 59A at 25°C case temperature, with a lower rating of 13A at 25°C ambient temperature.

 

The MOSFET boasts a low on-resistance of 8.8mOhm at 10A and 10V, minimizing conduction losses. Its gate charge is rated at 25nC maximum at 10V, contributing to reduced driver losses. The device operates within a wide temperature range of -55°C to 175°C.

 

Packaged in an 8-PowerTDFN, 5-lead format with wettable flank termination, this component is suitable for surface mounting. The small footprint (5x6 mm) facilitates compact design. It is AEC-Q101 qualified and RoHS compliant.

 

Key electrical characteristics include an input capacitance of 1420pF at 40V and a gate threshold voltage of 2V at 70µA. Power dissipation is rated at 73W at 25°C case temperature and 3.7W at 25°C ambient temperature.

NVMFS6H848NLWFT1G Quick Information

Product Type: MOSFET
Canonical Name: NVMFS6H848NLWFT1G N-Channel MOSFET
Subcategory: Single

NVMFS6H848NLWFT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NVMFS6H848NLWFT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS6H848NLWFT1G Features

  • 80V drain-source voltage rating.
  • 59A maximum continuous drain current.
  • Low 8.8mOhm Rds(on) at 10V.
  • Surface mount wettable flank package.
  • AEC-Q101 qualified for reliability.

NVMFS6H848NLWFT1G Applications

  • Suitable for compact power designs.
  • Efficient conduction loss minimization.
  • Reduced driver loss applications.
  • Automotive applications due to AEC-Q101.

NVMFS6H848NLWFT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NVMFS6H848NLWFT1G?

The maximum drain-source voltage (Vdss) is 80V.

What is the continuous drain current of the NVMFS6H848NLWFT1G?

The continuous drain current is 59A when measured at the case temperature (Tc) of 25°C, and 13A when measured at the ambient temperature (Ta) of 25°C.

What is the on-resistance of the NVMFS6H848NLWFT1G?

The maximum on-resistance (Rds On) is 8.8mOhm at a drain current of 10A and gate-source voltage of 10V.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NVMFS6H848NLWFT1G supplied in?

It is supplied in an 8-PowerTDFN, 5-lead package, specifically a 5-DFNW (4.9x5.9) with wettable flank termination, designed for surface mounting.

Is the NVMFS6H848NLWFT1G RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NVMFS6H848NLWFT1G?

The Moisture Sensitivity Level is 1.

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