Mfr Part #:

NVMFS6H836NT1G

The On Semiconductor NVMFS6H836NT1G is an 80V N-Channel MOSFET. It offers low Rds(on) and high continuous drain current capabilities.

✓ Total Stock: 16,500 pcs

$ Price Range: $3.39

NVMFS6H836NT1G Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	16,500 pcs On Request	16500 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

NVMFS6H836NT1G Description

Short technical summary and product information.

The NVMFS6H836NT1G from On Semiconductor is a single N-Channel MOSFET designed for power applications. It features a drain-to-source voltage (Vdss) of 80V and a low on-resistance (Rds On) of 6.7mOhm at 15A and 10V gate drive. This device can handle a continuous drain current of up to 74A at 25°C case temperature and 15A at 25°C ambient temperature.

With a maximum power dissipation of 89W at 25°C case temperature, the NVMFS6H836NT1G is suitable for demanding applications. It operates within a wide temperature range of -55°C to 175°C (TJ). The MOSFET is housed in a compact 5x6mm DFN package, specifically an 8-PowerTDFN with 5 leads, making it ideal for space-constrained designs.

Key electrical characteristics include an input capacitance (Ciss) of 1640pF at 40V and a gate charge (Qg) of 25nC at 10V. The device is AEC-Q101 qualified and RoHS compliant, indicating its suitability for automotive and industrial applications requiring high reliability.

NVMFS6H836NT1G Quick Information

Product Type: MOSFET

Series: NVMFS6H836NT1G

Canonical Name: N-Channel MOSFET

Subcategory: N-Channel

NVMFS6H836NT1G Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

NVMFS6H836NT1G Estimated Pricing

Qty	Low	High
1+	$3.39	$3.39

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS6H836NT1G Features

80V drain-to-source voltage rating.
Low 6.7mOhm Rds On at 15A.
High 74A continuous drain current.
Compact 5x6mm DFN package.
AEC-Q101 qualified and RoHS compliant.

NVMFS6H836NT1G Applications

Ideal for high-efficiency power switching.
Suitable for automotive applications.
Used in compact electronic designs.
Effective for load management circuits.

NVMFS6H836NT1G FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source voltage for the NVMFS6H836NT1G?

The maximum drain-to-source voltage (Vdss) is 80 V.

What is the typical on-resistance of the NVMFS6H836NT1G?

The maximum on-resistance (Rds On) is 6.7mOhm at a drain current of 15A and gate-source voltage of 10V.

What is the continuous drain current rating?

The continuous drain current is 74A at 25°C case temperature and 15A at 25°C ambient temperature.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NVMFS6H836NT1G supplied in?

The device is supplied in a 5-DFN (5x6) (8-SOFL) package.

Is the NVMFS6H836NT1G RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	15A (Ta), 74A (Tc)
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1640 pF @ 40 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	3.7W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs	6.7mOhm @ 15A, 10V
Supplier Device Package	5-DFN (5x6) (8-SOFL)
Supplier Package	5-DFN (5x6) (8-SOFL)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 95µA