NVMFS6H836NLT1G The ON Semiconductor NVMFS6H836NLT1G is an N-Channel MOSFET designed for power applications. It offers a high continuous drain current and low on-resistance.
Mfr Part #:

NVMFS6H836NLT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMFS6H836NLT1G is an N-Channel MOSFET designed for power applications. It offers a high continuous drain current and low on-resistance.
✓ Total Stock: 4,500 pcs
$ Price Range: $0.99

NVMFS6H836NLT1G Available from 1 distributor

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✓ Non-Authorised
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4,500 pcs
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NVMFS6H836NLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS6H836NLT1G Description

Short technical summary and product information.

The ON Semiconductor NVMFS6H836NLT1G is a single N-Channel MOSFET designed for power applications. It features a drain-to-source voltage of 80V and a continuous drain current of up to 77A at 25°C case temperature. The MOSFET boasts a low on-resistance of 6.2mOhm at 15A and 10V gate-source voltage, minimizing conduction losses.

 

With a small footprint of 5x6mm, this device is suitable for compact designs. It operates over a wide temperature range of -55°C to 175°C. The MOSFET is AEC-Q101 qualified and RoHS compliant, making it suitable for demanding applications.

 

Key electrical characteristics include a gate-to-source voltage of ±20V and a gate threshold voltage of 2V at 95µA. Input capacitance is rated at 1950pF at 40V, and gate charge is 34nC at 10V. The device is available in a 5-lead DFN package, suitable for surface mounting.

NVMFS6H836NLT1G Quick Information

Product Type: MOSFET
Series: NVMFS6H836NLT1G
Canonical Name: N-Channel MOSFET, 80V, 77A
Subcategory: N-Channel

NVMFS6H836NLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFS6H836NLT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS6H836NLT1G Features

  • 80V Drain-to-Source Voltage
  • 77A Continuous Drain Current
  • 6.2mOhm Max Rds On
  • 5x6mm DFN Package
  • AEC-Q101 Qualified

NVMFS6H836NLT1G Applications

  • Power supply circuits
  • Motor control applications
  • DC-DC converters
  • Load switching applications

NVMFS6H836NLT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVMFS6H836NLT1G?

The maximum drain-to-source voltage (Vdss) is 80V.

What is the maximum continuous drain current?

The maximum continuous drain current is 77A when measured at the case temperature (Tc) of 25°C, and 16A when measured at an ambient temperature (Ta) of 25°C.

What is the on-resistance of the NVMFS6H836NLT1G?

The maximum on-resistance (Rds On) is 6.2mOhm at a drain current of 15A and gate-source voltage of 10V.

What is the operating temperature range?

The device operates between -55°C and 175°C.

What package type is the NVMFS6H836NLT1G supplied in?

It is supplied in a 5x6mm DFN package with 5 leads, specifically designated as 8-PowerTDFN.

Is the NVMFS6H836NLT1G RoHS compliant?

Yes, the device is RoHS3 Compliant.

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