| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,567,500 pcs
|
1567500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7,000 pcs
|
7000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVMFS6H824NWFT1G is an N-Channel power MOSFET manufactured by On Semiconductor. It is rated for a drain-to-source voltage of 80V and a continuous drain current of 103A at 25°C. The device features a compact 8-PowerTDFN package with 5 leads, suitable for space-constrained applications. Its low Rds(on) of 4.5mΩ at 10V Vgs minimizes conduction losses, and the gate charge of 38nC supports efficient switching. The device is RoHS3 compliant and suitable for high-current switching, power management, and motor control circuits. Its thermal characteristics include a junction-to-ambient resistance of 39.8°C/W and a junction-to-case resistance of 1.3°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vds) is 80 V.
It comes in an 8-PowerTDFN package with 5 leads.
Yes, it is RoHS3 compliant.
The continuous drain current at 25°C is 103A.
It operates from -55°C to 175°C.