| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,556 pcs
|
1556 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVMFS6H824NT1G from On Semiconductor is an N-Channel MOSFET designed for efficient power management. It offers a drain-to-source voltage of 80V and a continuous drain current of up to 103A at 25°C case temperature, with a lower rating of 19A at 25°C ambient temperature.
Key electrical characteristics include a low on-resistance of 4.5mOhm at 20A and 10V gate drive, and a gate charge of 38nC at 10V. The device operates within a wide temperature range of -55°C to 175°C.
Packaged in an 8-PowerTDFN, 5-lead (5x6mm) surface-mount package, the NVMFS6H824NT1G is suitable for compact designs. It is AEC-Q101 qualified and RoHS compliant, making it suitable for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 80 V.
The Rds On is a maximum of 4.5mOhm at 20A and 10V.
The continuous drain current is 103A at 25°C case temperature and 19A at 25°C ambient temperature.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in a 5-DFN (5x6mm) package, also referred to as 8-PowerTDFN.
Yes, the device is RoHS3 compliant.