NVMFS6H818NLWFT1G The ON Semiconductor NVMFS6H818NLWFT1G is an 80V N-Channel MOSFET designed for power applications. It features low Rds(on) and a compact 5x6mm DFN package.
Mfr Part #:

NVMFS6H818NLWFT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMFS6H818NLWFT1G is an 80V N-Channel MOSFET designed for power applications. It features low Rds(on) and a compact 5x6mm DFN package.
✓ Total Stock: 50 pcs
$ Price Range: $0.99

NVMFS6H818NLWFT1G Available from 1 distributor

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NVMFS6H818NLWFT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS6H818NLWFT1G Description

Short technical summary and product information.

The ON Semiconductor NVMFS6H818NLWFT1G is an N-Channel MOSFET with a drain-to-source voltage of 80V. It offers a low on-resistance of 3.2 mOhm at 20A and 10V gate drive, minimizing conduction losses.

 

This MOSFET is designed for efficient power management, featuring a maximum continuous drain current of 135A at 25°C case temperature and 22A at 25°C ambient temperature. Its power dissipation capabilities are rated at 140W (Tc) and 3.8W (Ta) at 25°C.

 

The device operates within a temperature range of -55°C to 175°C and comes in a compact 5x6mm DFN package (8-PowerTDFN, 5 Leads), suitable for space-constrained designs. It is AEC-Q101 qualified and RoHS3 compliant.

 

Key electrical characteristics include a gate charge of 64 nC at 10V and an input capacitance of 3844 pF at 40V. The gate threshold voltage is 2V at 190µA.

NVMFS6H818NLWFT1G Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET
Subcategory: N-Channel

NVMFS6H818NLWFT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFS6H818NLWFT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS6H818NLWFT1G Features

  • 80V drain-to-source voltage rating.
  • Low 3.2mOhm Rds(on) at 10V.
  • High 135A continuous drain current.
  • Compact 5x6mm DFN package.
  • AEC-Q101 Qualified for automotive use.

NVMFS6H818NLWFT1G Applications

  • Ideal for power supply circuits.
  • Suitable for motor control applications.
  • Used in DC-DC converters.
  • Applicable in load switching.

NVMFS6H818NLWFT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVMFS6H818NLWFT1G?

The maximum drain-to-source voltage is 80 V.

What is the typical on-resistance of the NVMFS6H818NLWFT1G?

The typical on-resistance is 3.2 mOhm at 20A drain current and 10V gate-to-source voltage.

What is the maximum continuous drain current for the NVMFS6H818NLWFT1G?

The maximum continuous drain current is 135 A at 25°C case temperature.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 175°C.

What package type is the NVMFS6H818NLWFT1G MOSFET supplied in?

It is supplied in an 8-PowerTDFN, 5 Leads package, with a supplier package of 5-DFN (5x6) (8-SOFL).

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